MG600Q1US51 Todos los transistores

 

MG600Q1US51 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MG600Q1US51
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 4100 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 600 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.8 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 300 nS
   Paquete / Cubierta: MODULE
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MG600Q1US51 Datasheet (PDF)

 ..1. Size:259K  toshiba
mg600q1us51.pdf pdf_icon

MG600Q1US51

MG600Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG600Q1US51 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3s (Max) f @Inductive load Low saturation voltage : V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in onepackage. The electrodes are isolated from case

 9.1. Size:443K  macmic
mmg600k120u6hn.pdf pdf_icon

MG600Q1US51

MMG600K120U6HN1200V 600A IGBT ModuleJune 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching los

 9.2. Size:1175K  macmic
mmg600wb065tlb6en.pdf pdf_icon

MG600Q1US51

MMG600WB065TLB6EN650V 600A 3-Level IGBT ModuleAugust 2016 Preliminary RoHS CompliantPRODUCT FEATURES 650V IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Low switching losses and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS 3-Level appl

 9.3. Size:1323K  macmic
mmg600wb065b6en.pdf pdf_icon

MG600Q1US51

MMG600WB065B6EN650V 600A IGBT ModuleMarch 2017 Preliminary RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense incl

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History: AOB30B65LN2V | MMG200D120B6TC | APTGT75DA120D1

 

 
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