Справочник IGBT. MG600Q1US51

 

MG600Q1US51 Даташит. Аналоги. Параметры и характеристики.


   Наименование: MG600Q1US51
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 4100 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 600 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.8 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 300 nS
   Тип корпуса: MODULE
     - подбор IGBT транзистора по параметрам

 

MG600Q1US51 Datasheet (PDF)

 ..1. Size:259K  toshiba
mg600q1us51.pdfpdf_icon

MG600Q1US51

MG600Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG600Q1US51 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3s (Max) f @Inductive load Low saturation voltage : V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in onepackage. The electrodes are isolated from case

 9.1. Size:443K  macmic
mmg600k120u6hn.pdfpdf_icon

MG600Q1US51

MMG600K120U6HN1200V 600A IGBT ModuleJune 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching los

 9.2. Size:1175K  macmic
mmg600wb065tlb6en.pdfpdf_icon

MG600Q1US51

MMG600WB065TLB6EN650V 600A 3-Level IGBT ModuleAugust 2016 Preliminary RoHS CompliantPRODUCT FEATURES 650V IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Low switching losses and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS 3-Level appl

 9.3. Size:1323K  macmic
mmg600wb065b6en.pdfpdf_icon

MG600Q1US51

MMG600WB065B6EN650V 600A IGBT ModuleMarch 2017 Preliminary RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense incl

Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MMG200D120B6TC | AOB30B65LN2V | APTGT75DA120D1

 

 
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