MG600Q1US51 PDF and Equivalents Search

 

MG600Q1US51 Specs and Replacement

Type Designator: MG600Q1US51

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 4100 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 600 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃

tr ⓘ - Rise Time, typ: 300 nS

Package: MODULE

 MG600Q1US51 Substitution

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MG600Q1US51 datasheet

 ..1. Size:259K  toshiba
mg600q1us51.pdf pdf_icon

MG600Q1US51

MG600Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG600Q1US51 High Power Switching Applications Unit mm Motor Control Applications High input impedance High speed t = 0.3 s (Max) f @Inductive load Low saturation voltage V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in onepackage. The electrodes are isolated from case... See More ⇒

 9.1. Size:443K  macmic
mmg600k120u6hn.pdf pdf_icon

MG600Q1US51

MMG600K120U6HN 1200V 600A IGBT Module June 2015 Version 01 RoHS Compliant PRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching los... See More ⇒

 9.2. Size:1175K  macmic
mmg600wb065tlb6en.pdf pdf_icon

MG600Q1US51

MMG600WB065TLB6EN 650V 600A 3-Level IGBT Module August 2016 Preliminary RoHS Compliant PRODUCT FEATURES 650V IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Low switching losses and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense included APPLICATIONS 3-Level appl... See More ⇒

 9.3. Size:1323K  macmic
mmg600wb065b6en.pdf pdf_icon

MG600Q1US51

MMG600WB065B6EN 650V 600A IGBT Module March 2017 Preliminary RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense incl... See More ⇒

Specs: MG50J1BS11, MG50J2YS50, MG50J6ES50, MG50Q1BS11, MG50Q2YS40, MG50Q2YS50, MG50Q6ES40, MG50Q6ES50A, BT60T60ANFK, MG75J1BS11, MG75J1ZS40, MG75J1ZS50, MG75J2YS50, MG75J2YS91, MG75J6ES50, MG75Q1BS11, MG75Q2YS40

Keywords - MG600Q1US51 transistor spec

 MG600Q1US51 cross reference
 MG600Q1US51 equivalent finder
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