MG75J1BS11 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MG75J1BS11
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 200 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 300 nS
Paquete / Cubierta: MODULE
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MG75J1BS11 Datasheet (PDF)
mg75j1bs11.pdf

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mg75j1zs40.pdf

This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.
mmg75j120uz.pdf

MMG75J120UZ1200V 75A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High Short Circuit Capability Free wheeling diodes with fast and soft reverse recovery VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Popular SOT-227 PackageAPPLICATIONS Invertor Convertor Welder SMPS and UPS Induction HeatingIGBT
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: IRGIB10B60KD1P | IXYT30N65C3H1HV | SKM100GAL12T4 | SKM150GAR123D | 6MBI100VX-120-50 | SMBL1G300US60 | IXXH110N65C4
History: IRGIB10B60KD1P | IXYT30N65C3H1HV | SKM100GAL12T4 | SKM150GAR123D | 6MBI100VX-120-50 | SMBL1G300US60 | IXXH110N65C4



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