MG75J1BS11 PDF and Equivalents Search

 

MG75J1BS11 Specs and Replacement

Type Designator: MG75J1BS11

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃

tr ⓘ - Rise Time, typ: 300 nS

Package: MODULE

 MG75J1BS11 Substitution

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MG75J1BS11 datasheet

 ..1. Size:213K  toshiba
mg75j1bs11.pdf pdf_icon

MG75J1BS11

This datasheet has been downloaded from www.DatasheetCatalog.com Datasheets for electronic components. ... See More ⇒

 8.1. Size:300K  toshiba
mg75j1zs50.pdf pdf_icon

MG75J1BS11

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 8.2. Size:253K  toshiba
mg75j1zs40.pdf pdf_icon

MG75J1BS11

This datasheet has been downloaded from www.DatasheetCatalog.com Datasheets for electronic components. ... See More ⇒

 8.3. Size:445K  macmic
mmg75j120uz.pdf pdf_icon

MG75J1BS11

MMG75J120UZ 1200V 75A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES High Short Circuit Capability Free wheeling diodes with fast and soft reverse recovery VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Popular SOT-227 Package APPLICATIONS Invertor Convertor Welder SMPS and UPS Induction Heating IGBT ... See More ⇒

Specs: MG50J2YS50, MG50J6ES50, MG50Q1BS11, MG50Q2YS40, MG50Q2YS50, MG50Q6ES40, MG50Q6ES50A, MG600Q1US51, XNF15N60T, MG75J1ZS40, MG75J1ZS50, MG75J2YS50, MG75J2YS91, MG75J6ES50, MG75Q1BS11, MG75Q2YS40, MG75Q2YS42

Keywords - MG75J1BS11 transistor spec

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