MG75J1ZS50 Todos los transistores

 

MG75J1ZS50 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MG75J1ZS50
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 390 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 120 nS
   Paquete / Cubierta: MODULE
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MG75J1ZS50 Datasheet (PDF)

 ..1. Size:300K  toshiba
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MG75J1ZS50

 6.1. Size:253K  toshiba
mg75j1zs40.pdf pdf_icon

MG75J1ZS50

This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.

 8.1. Size:213K  toshiba
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MG75J1ZS50

This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.

 8.2. Size:445K  macmic
mmg75j120uz.pdf pdf_icon

MG75J1ZS50

MMG75J120UZ1200V 75A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High Short Circuit Capability Free wheeling diodes with fast and soft reverse recovery VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Popular SOT-227 PackageAPPLICATIONS Invertor Convertor Welder SMPS and UPS Induction HeatingIGBT

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: VS-GB150TS60NPBF | GT25Q101 | NCE20TH60BP

 

 
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