All IGBT. MG75J1ZS50 Datasheet

 

MG75J1ZS50 Datasheet and Replacement


   Type Designator: MG75J1ZS50
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 390 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 120 nS
   Package: MODULE
      - IGBT Cross-Reference

 

MG75J1ZS50 Datasheet (PDF)

 ..1. Size:300K  toshiba
 mg75j1zs50.pdf pdf_icon

MG75J1ZS50

 6.1. Size:253K  toshiba
 mg75j1zs40.pdf pdf_icon

MG75J1ZS50

This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.

 8.1. Size:213K  toshiba
 mg75j1bs11.pdf pdf_icon

MG75J1ZS50

This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.

 8.2. Size:445K  macmic
 mmg75j120uz.pdf pdf_icon

MG75J1ZS50

MMG75J120UZ1200V 75A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High Short Circuit Capability Free wheeling diodes with fast and soft reverse recovery VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Popular SOT-227 PackageAPPLICATIONS Invertor Convertor Welder SMPS and UPS Induction HeatingIGBT

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Datasheet: MG50Q1BS11 , MG50Q2YS40 , MG50Q2YS50 , MG50Q6ES40 , MG50Q6ES50A , MG600Q1US51 , MG75J1BS11 , MG75J1ZS40 , GT60N321 , MG75J2YS50 , MG75J2YS91 , MG75J6ES50 , MG75Q1BS11 , MG75Q2YS40 , MG75Q2YS42 , MG75Q2YS50 , MG75Q2YS51 .

History: SGTP50V65UFCR3P7 | IXST35N120B | NGTB15N120IHRWG | MSG100D350FHS | 20MT120UFP | MSG20T65HPT1 | MSG40T120FQC

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