MIG50Q201H - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MIG50Q201H
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
Paquete / Cubierta: MODULE
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MIG50Q201H Datasheet (PDF)
mig50q201h.pdf
MIG50Q201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG50Q201H High Power Switching Applications Motor Control Applications Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current, realtime-current-control (RTC), under-voltage & over-temperature) in one package. The electrodes are isolated from case.
Otros transistores... MG75Q2YS40 , MG75Q2YS42 , MG75Q2YS50 , MG75Q2YS51 , MIEB100W1200DPFTEH , MIEB101W1200DPFEH , MIG10Q806H , MIG10Q806HA , RJP63K2DPP-M0 , MITA150H1700TEH , MIXA100PF1200TMH , MIXA100PM650TMI , MIXA150Q1200VA , MIXA150R1200VA , MIXA20WB1200TMI , MIXA225PF1200TSF , MIXA225RF1200TSF .
History: BSM100GAL120DN2 | FGD3040G2-F085 | IXSN80N60A | IKA10N65ET6 | VS-GB70LA60UF | IXXH100N60C3 | LEGM75BE120L5H
History: BSM100GAL120DN2 | FGD3040G2-F085 | IXSN80N60A | IKA10N65ET6 | VS-GB70LA60UF | IXXH100N60C3 | LEGM75BE120L5H
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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