MIG50Q201H PDF and Equivalents Search

 

MIG50Q201H Specs and Replacement

Type Designator: MIG50Q201H

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃

Package: MODULE

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MIG50Q201H datasheet

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MIG50Q201H

MIG50Q201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG50Q201H High Power Switching Applications Motor Control Applications Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current, realtime-current-control (RTC), under-voltage & over-temperature) in one package. The electrodes are isolated from case. ... See More ⇒

Specs: MG75Q2YS40, MG75Q2YS42, MG75Q2YS50, MG75Q2YS51, MIEB100W1200DPFTEH, MIEB101W1200DPFEH, MIG10Q806H, MIG10Q806HA, RJP63K2DPP-M0, MITA150H1700TEH, MIXA100PF1200TMH, MIXA100PM650TMI, MIXA150Q1200VA, MIXA150R1200VA, MIXA20WB1200TMI, MIXA225PF1200TSF, MIXA225RF1200TSF

Keywords - MIG50Q201H transistor spec

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