MIG50Q201H IGBT. Datasheet pdf. Equivalent
Type Designator: MIG50Q201H
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
Package: MODULE
MIG50Q201H Transistor Equivalent Substitute - IGBT Cross-Reference Search
MIG50Q201H Datasheet (PDF)
mig50q201h.pdf
MIG50Q201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG50Q201H High Power Switching Applications Motor Control Applications Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current, realtime-current-control (RTC), under-voltage & over-temperature) in one package. The electrodes are isolated from case.
Datasheet: MG75Q2YS40 , MG75Q2YS42 , MG75Q2YS50 , MG75Q2YS51 , MIEB100W1200DPFTEH , MIEB101W1200DPFEH , MIG10Q806H , MIG10Q806HA , RJP63K2DPP-M0 , MITA150H1700TEH , MIXA100PF1200TMH , MIXA100PM650TMI , MIXA150Q1200VA , MIXA150R1200VA , MIXA20WB1200TMI , MIXA225PF1200TSF , MIXA225RF1200TSF .
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