IRG4PSH71K - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG4PSH71K
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 350 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 78 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.97 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 38 nS
Coesⓘ - Capacitancia de salida, typ: 400 pF
Qgⓘ - Carga total de la puerta, typ: 410 nC
Paquete / Cubierta: SUPER247
Búsqueda de reemplazo de IRG4PSH71K - IGBT
IRG4PSH71K Datasheet (PDF)
irg4psh71k.pdf
PD - 91687AIRG4PSH71KPRELIMINARYShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCFeaturesVCES = 1200V Hole-less clip/pressure mount package compatiblewith TO-247 and TO-264, with reinforced pinsVCE(on) typ. = 2.97V High short circuit rating IGBTs, optimized forGmotorcontrol Minimum switching losses combined with low@VGE = 15V, IC = 42A
irg4psh71kd.pdf
PD - 91688AIRG4PSH71KDPRELIMINARY Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeatures Hole-less clip/pressure mount package compatible VCES = 1200Vwith TO-247 and TO-264, with reinforced pins High short circuit rating IGBTs, optimized forVCE(on) typ. = 2.97VmotorcontrolG Minimum switching losses com
irg4psh71ud.pdf
PD - 91686IRG4PSH71UDINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast Copack IGBTULTRAFAST SOFT RECOVERY DIODEFeaturesC UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHzVCES = 1200V in resonant mode soft switching Generation 4 IGBT design provides tighterVCE(on) typ. = 2.52VG parameter distribution and higher effi
irg4psh71u.pdf
PD - 91685IRG4PSH71UUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast switching speed optimized for operatingVCES = 1200V frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching Generation 4 IGBT design provides tighterVCE(on) typ. = 2.50VG parameter distribution and higher efficiency (minimum switching and conduct
Otros transistores... IRG4PH50KD , IRG4PH50S , IRG4PH50U , IRG4PH50UD , IRG4PSC71K , IRG4PSC71KD , IRG4PSC71U , IRG4PSC71UD , IHW40T60 , IRG4PSH71KD , IRG4RC10K , IRG4RC10KD , IRG4RC10S , IRG4RC10SD , IRG4RC10U , IRG4RC10UD , IRG4ZC70UD .
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