Справочник IGBT. IRG4PSH71K

 

IRG4PSH71K - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRG4PSH71K

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 350W

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1200V

Напряжение насыщения коллектор-эмиттер (Ucesat): 3.90V

Максимальный постоянный ток коллектора (Ic): 42A

Максимальная температура перехода (Tj): 150

Корпус: SUPER247

Аналог (замена) для IRG4PSH71K

 

 

IRG4PSH71K Datasheet (PDF)

1.1. irg4psh71kd.pdf Size:200K _international_rectifier

IRG4PSH71K
IRG4PSH71K

PD - 91688A IRG4PSH71KD PRELIMINARY Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Hole-less clip/pressure mount package compatible VCES = 1200V with TO-247 and TO-264, with reinforced pins High short circuit rating IGBTs, optimized for VCE(on) typ. = 2.97V motorcontrol G Minimum switching losses combined wit

1.2. irg4psh71k.pdf Size:146K _international_rectifier

IRG4PSH71K
IRG4PSH71K

PD - 91687A IRG4PSH71K PRELIMINARY Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features VCES = 1200V Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins VCE(on) typ. = 2.97V High short circuit rating IGBTs, optimized for G motorcontrol Minimum switching losses combined with low @VGE = 15V, IC = 42A E condu

 1.3. irg4psh71kd.pdf Size:198K _igbt_a

IRG4PSH71K
IRG4PSH71K

PD - 91688A IRG4PSH71KD PRELIMINARY Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible VCES = 1200V with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for VCE(on) typ. = 2.97V motorcontrol G • Minimum switching losses com

1.4. irg4psh71ud.pdf Size:326K _igbt_a

IRG4PSH71K
IRG4PSH71K

PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast Copack IGBT ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz VCES = 1200V in resonant mode soft switching • Generation 4 IGBT design provides tighter VCE(on) typ. = 2.52V G parameter distribution and higher effi

 1.5. irg4psh71k.pdf Size:136K _igbt_a

IRG4PSH71K
IRG4PSH71K

PD - 91687A IRG4PSH71K PRELIMINARY Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features VCES = 1200V • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins VCE(on) typ. = 2.97V • High short circuit rating IGBTs, optimized for G motorcontrol • Minimum switching losses combined with low @VGE = 15V, IC = 42A

1.6. irg4psh71u.pdf Size:271K _igbt_a

IRG4PSH71K
IRG4PSH71K

PD - 91685 IRG4PSH71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating VCES = 1200V frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter VCE(on) typ. = 2.50V G parameter distribution and higher efficiency (minimum switching and conduct

Другие IGBT... IRG4PH50KD , IRG4PH50S , IRG4PH50U , IRG4PH50UD , IRG4PSC71K , IRG4PSC71KD , IRG4PSC71U , IRG4PSC71UD , FGH60N60SFD , IRG4PSH71KD , IRG4RC10K , IRG4RC10KD , IRG4RC10S , IRG4RC10SD , IRG4RC10U , IRG4RC10UD , IRG4ZC70UD .

 

 
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