IRG4PSH71K Specs and Replacement
Type Designator: IRG4PSH71K
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 78 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.97 V @25℃
tr ⓘ - Rise Time, typ: 38 nS
Coesⓘ - Output Capacitance, typ: 400 pF
Package: SUPER247
IRG4PSH71K Substitution - IGBT ⓘ Cross-Reference Search
IRG4PSH71K datasheet
irg4psh71k.pdf
PD - 91687A IRG4PSH71K PRELIMINARY Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features VCES = 1200V Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins VCE(on) typ. = 2.97V High short circuit rating IGBTs, optimized for G motorcontrol Minimum switching losses combined with low @VGE = 15V, IC = 42A ... See More ⇒
irg4psh71kd.pdf
PD - 91688A IRG4PSH71KD PRELIMINARY Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Hole-less clip/pressure mount package compatible VCES = 1200V with TO-247 and TO-264, with reinforced pins High short circuit rating IGBTs, optimized for VCE(on) typ. = 2.97V motorcontrol G Minimum switching losses com... See More ⇒
irg4psh71ud.pdf
PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast Copack IGBT ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz VCES = 1200V in resonant mode soft switching Generation 4 IGBT design provides tighter VCE(on) typ. = 2.52V G parameter distribution and higher effi... See More ⇒
irg4psh71u.pdf
PD - 91685 IRG4PSH71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast switching speed optimized for operating VCES = 1200V frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching Generation 4 IGBT design provides tighter VCE(on) typ. = 2.50V G parameter distribution and higher efficiency (minimum switching and conduct... See More ⇒
Specs: IRG4PH50KD , IRG4PH50S , IRG4PH50U , IRG4PH50UD , IRG4PSC71K , IRG4PSC71KD , IRG4PSC71U , IRG4PSC71UD , NGD8201N , IRG4PSH71KD , IRG4RC10K , IRG4RC10KD , IRG4RC10S , IRG4RC10SD , IRG4RC10U , IRG4RC10UD , IRG4ZC70UD .
Keywords - IRG4PSH71K transistor spec
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