NXH80T120L2Q0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NXH80T120L2Q0
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 146 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 65 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.17 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 28 nS
Coesⓘ - Capacitancia de salida, typ: 592 pF
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de NXH80T120L2Q0 - IGBT
NXH80T120L2Q0 Datasheet (PDF)
nxh80t120l2q0.pdf
NXH80T120L2Q0PG,NXH80T120L2Q0SGAdvance InformationT-Type, Neutral PointClamp Modulewww.onsemi.comThis high-density, integrated power module combineshigh-performance IGBTs with rugged anti-parallel diodes for sinewave inverter applications.80 A, 1200 V (Bridge)50 A, 600 V (Neutral Point Clamp)FeaturesT Type Neutral Point Clamp Extremely Efficient Trench IGBT with
nxh80t120l2q0pg.pdf
NXH80T120L2Q0PG,NXH80T120L2Q0SGAdvance InformationT-Type, Neutral PointClamp Modulewww.onsemi.comThis high-density, integrated power module combineshigh-performance IGBTs with rugged anti-parallel diodes for sinewave inverter applications.80 A, 1200 V (Bridge)50 A, 600 V (Neutral Point Clamp)FeaturesT Type Neutral Point Clamp Extremely Efficient Trench IGBT with
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2