NXH80T120L2Q0 Datasheet and Replacement
Type Designator: NXH80T120L2Q0
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 146 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 65 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.17 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 28 nS
Coesⓘ - Output Capacitance, typ: 592 pF
Package: MODULE
NXH80T120L2Q0 substitution
NXH80T120L2Q0 Datasheet (PDF)
nxh80t120l2q0.pdf
NXH80T120L2Q0PG,NXH80T120L2Q0SGAdvance InformationT-Type, Neutral PointClamp Modulewww.onsemi.comThis high-density, integrated power module combineshigh-performance IGBTs with rugged anti-parallel diodes for sinewave inverter applications.80 A, 1200 V (Bridge)50 A, 600 V (Neutral Point Clamp)FeaturesT Type Neutral Point Clamp Extremely Efficient Trench IGBT with
nxh80t120l2q0pg.pdf
NXH80T120L2Q0PG,NXH80T120L2Q0SGAdvance InformationT-Type, Neutral PointClamp Modulewww.onsemi.comThis high-density, integrated power module combineshigh-performance IGBTs with rugged anti-parallel diodes for sinewave inverter applications.80 A, 1200 V (Bridge)50 A, 600 V (Neutral Point Clamp)FeaturesT Type Neutral Point Clamp Extremely Efficient Trench IGBT with
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: 1MBI800UG-330 | MG25Q6ES51
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History: 1MBI800UG-330 | MG25Q6ES51
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