All IGBT. NXH80T120L2Q0 Datasheet

 

NXH80T120L2Q0 Datasheet and Replacement


   Type Designator: NXH80T120L2Q0
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 146 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 65 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.17 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 592 pF
   Package: MODULE
      - IGBT Cross-Reference

 

NXH80T120L2Q0 Datasheet (PDF)

 ..1. Size:175K  onsemi
nxh80t120l2q0.pdf pdf_icon

NXH80T120L2Q0

NXH80T120L2Q0PG,NXH80T120L2Q0SGAdvance InformationT-Type, Neutral PointClamp Modulewww.onsemi.comThis high-density, integrated power module combineshigh-performance IGBTs with rugged anti-parallel diodes for sinewave inverter applications.80 A, 1200 V (Bridge)50 A, 600 V (Neutral Point Clamp)FeaturesT Type Neutral Point Clamp Extremely Efficient Trench IGBT with

 0.1. Size:175K  onsemi
nxh80t120l2q0pg.pdf pdf_icon

NXH80T120L2Q0

NXH80T120L2Q0PG,NXH80T120L2Q0SGAdvance InformationT-Type, Neutral PointClamp Modulewww.onsemi.comThis high-density, integrated power module combineshigh-performance IGBTs with rugged anti-parallel diodes for sinewave inverter applications.80 A, 1200 V (Bridge)50 A, 600 V (Neutral Point Clamp)FeaturesT Type Neutral Point Clamp Extremely Efficient Trench IGBT with

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MG25Q6ES51 | 7MBR75U2B060

Keywords - NXH80T120L2Q0 transistor datasheet

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