All IGBT. NXH80T120L2Q0 Datasheet

 

NXH80T120L2Q0 IGBT. Datasheet pdf. Equivalent


   Type Designator: NXH80T120L2Q0
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 146
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 65
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.17
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 28
   Collector Capacity (Cc), typ, pF: 592
   Total Gate Charge (Qg), typ, nC: 840
   Package: MODULE

 NXH80T120L2Q0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NXH80T120L2Q0 Datasheet (PDF)

 ..1. Size:175K  onsemi
nxh80t120l2q0.pdf

NXH80T120L2Q0
NXH80T120L2Q0

NXH80T120L2Q0PG,NXH80T120L2Q0SGAdvance InformationT-Type, Neutral PointClamp Modulewww.onsemi.comThis high-density, integrated power module combineshigh-performance IGBTs with rugged anti-parallel diodes for sinewave inverter applications.80 A, 1200 V (Bridge)50 A, 600 V (Neutral Point Clamp)FeaturesT Type Neutral Point Clamp Extremely Efficient Trench IGBT with

 0.1. Size:175K  onsemi
nxh80t120l2q0pg.pdf

NXH80T120L2Q0
NXH80T120L2Q0

NXH80T120L2Q0PG,NXH80T120L2Q0SGAdvance InformationT-Type, Neutral PointClamp Modulewww.onsemi.comThis high-density, integrated power module combineshigh-performance IGBTs with rugged anti-parallel diodes for sinewave inverter applications.80 A, 1200 V (Bridge)50 A, 600 V (Neutral Point Clamp)FeaturesT Type Neutral Point Clamp Extremely Efficient Trench IGBT with

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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