NXH80T120L2Q0PG IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NXH80T120L2Q0PG
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 146 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 65 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.17 V @25℃
trⓘ - Tiempo de subida, typ: 28 nS
Coesⓘ - Capacitancia de salida, typ: 592 pF
Encapsulados: MODULE
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NXH80T120L2Q0PG datasheet
nxh80t120l2q0pg.pdf
NXH80T120L2Q0PG, NXH80T120L2Q0SG Advance Information T-Type, Neutral Point Clamp Module www.onsemi.com This high-density, integrated power module combines high-performance IGBTs with rugged anti-parallel diodes for sine wave inverter applications. 80 A, 1200 V (Bridge) 50 A, 600 V (Neutral Point Clamp) Features T Type Neutral Point Clamp Extremely Efficient Trench IGBT with
nxh80t120l2q0.pdf
NXH80T120L2Q0PG, NXH80T120L2Q0SG Advance Information T-Type, Neutral Point Clamp Module www.onsemi.com This high-density, integrated power module combines high-performance IGBTs with rugged anti-parallel diodes for sine wave inverter applications. 80 A, 1200 V (Bridge) 50 A, 600 V (Neutral Point Clamp) Features T Type Neutral Point Clamp Extremely Efficient Trench IGBT with
Otros transistores... MIXG240W1200TEH , MP6750 , MP6752 , MP6753 , MP6757 , MSAGA11F120D , MUBW30-12A6 , NXH80T120L2Q0 , SGT40N60FD2PN , PDMB200E6 , PM100CBS060 , PM15CMA060 , PM25CL1A120 , PS21265-AP , PS21265-P , PSTG25HDT12 , PSTG25HTT12 .
History: MP6757
History: MP6757
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