NXH80T120L2Q0PG Todos los transistores

 

NXH80T120L2Q0PG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NXH80T120L2Q0PG
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 146 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 65 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.17 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 28 nS
   Coesⓘ - Capacitancia de salida, typ: 592 pF
   Paquete / Cubierta: MODULE
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NXH80T120L2Q0PG Datasheet (PDF)

 0.1. Size:175K  onsemi
 nxh80t120l2q0pg.pdf pdf_icon

NXH80T120L2Q0PG

NXH80T120L2Q0PG,NXH80T120L2Q0SGAdvance InformationT-Type, Neutral PointClamp Modulewww.onsemi.comThis high-density, integrated power module combineshigh-performance IGBTs with rugged anti-parallel diodes for sinewave inverter applications.80 A, 1200 V (Bridge)50 A, 600 V (Neutral Point Clamp)FeaturesT Type Neutral Point Clamp Extremely Efficient Trench IGBT with

 1.1. Size:175K  onsemi
 nxh80t120l2q0.pdf pdf_icon

NXH80T120L2Q0PG

NXH80T120L2Q0PG,NXH80T120L2Q0SGAdvance InformationT-Type, Neutral PointClamp Modulewww.onsemi.comThis high-density, integrated power module combineshigh-performance IGBTs with rugged anti-parallel diodes for sinewave inverter applications.80 A, 1200 V (Bridge)50 A, 600 V (Neutral Point Clamp)FeaturesT Type Neutral Point Clamp Extremely Efficient Trench IGBT with

Otros transistores... MIXG240W1200TEH , MP6750 , MP6752 , MP6753 , MP6757 , MSAGA11F120D , MUBW30-12A6 , NXH80T120L2Q0 , CRG60T60AN3H , PDMB200E6 , PM100CBS060 , PM15CMA060 , PM25CL1A120 , PS21265-AP , PS21265-P , PSTG25HDT12 , PSTG25HTT12 .

History: IXBH42N170A | APT33GF120B2RD | 4MBI400VG-060R-50 | SM2G100US60 | GT10G101 | IXXN200N60C3H1 | FGPF4565

 

 
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