All IGBT. NXH80T120L2Q0PG Datasheet

 

NXH80T120L2Q0PG IGBT. Datasheet pdf. Equivalent


   Type Designator: NXH80T120L2Q0PG
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 146 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 65 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.17 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 592 pF
   Package: MODULE

 NXH80T120L2Q0PG Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NXH80T120L2Q0PG Datasheet (PDF)

 0.1. Size:175K  onsemi
nxh80t120l2q0pg.pdf

NXH80T120L2Q0PG
NXH80T120L2Q0PG

NXH80T120L2Q0PG,NXH80T120L2Q0SGAdvance InformationT-Type, Neutral PointClamp Modulewww.onsemi.comThis high-density, integrated power module combineshigh-performance IGBTs with rugged anti-parallel diodes for sinewave inverter applications.80 A, 1200 V (Bridge)50 A, 600 V (Neutral Point Clamp)FeaturesT Type Neutral Point Clamp Extremely Efficient Trench IGBT with

 1.1. Size:175K  onsemi
nxh80t120l2q0.pdf

NXH80T120L2Q0PG
NXH80T120L2Q0PG

NXH80T120L2Q0PG,NXH80T120L2Q0SGAdvance InformationT-Type, Neutral PointClamp Modulewww.onsemi.comThis high-density, integrated power module combineshigh-performance IGBTs with rugged anti-parallel diodes for sinewave inverter applications.80 A, 1200 V (Bridge)50 A, 600 V (Neutral Point Clamp)FeaturesT Type Neutral Point Clamp Extremely Efficient Trench IGBT with

Datasheet: MIXG240W1200TEH , MP6750 , MP6752 , MP6753 , MP6757 , MSAGA11F120D , MUBW30-12A6 , NXH80T120L2Q0 , IHW20N135R5 , PDMB200E6 , PM100CBS060 , PM15CMA060 , PM25CL1A120 , PS21265-AP , PS21265-P , PSTG25HDT12 , PSTG25HTT12 .

 

 
Back to Top