GT15Q102 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GT15Q102
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 170
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 15
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.1
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 50
Paquete / Cubierta: 2-16C1C
Búsqueda de reemplazo de GT15Q102 - IGBT
GT15Q102 Datasheet (PDF)
gt15q102.pdf
GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications Unit: mm Third-generation IGBT Enhancement mode type High speed: tf = 0.32 s (max) Low saturation voltage: VCE (sat) = 2.7 V (max) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-emitter voltage VCES 1200 V
gt15q311.pdf
GT15Q311 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q311 High Power Switching Applications Unit: mmMotor Control Applications Third-generation IGBT Enhancement mode type High speed: tf = 0.32 s (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Maximum Ratings (Ta = 25C) Char
gt15q301.pdf
GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 High-Power Switching Applications Unit: mmMotor Control Applications Third-generation IGBT Enhancement mode type High speed : tf = 0.32 s (max) Low saturation voltage : VCE (sat) = 2.7 V (max) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25C) Cha
Otros transistores... PM15CMA060 , PM25CL1A120 , PS21265-AP , PS21265-P , PSTG25HDT12 , PSTG25HTT12 , PSTG50HST12 , PSTG75HST12 , IKW30N60H3 , MSG50N350FH , NGD8201AN , FMG2G400US60 , BT40T60ANF , GT40QR21 , IHW15N120R2 , IXBH15N140 , IXBH15N160 .
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