GT15Q102 Datasheet. Specs and Replacement

Type Designator: GT15Q102  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 170 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 15 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Package: TO247

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GT15Q102 datasheet

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GT15Q102

GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications Unit mm Third-generation IGBT Enhancement mode type High speed tf = 0.32 s (max) Low saturation voltage VCE (sat) = 2.7 V (max) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 1200 V ... See More ⇒

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GT15Q102

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GT15Q102

GT15Q311 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q311 High Power Switching Applications Unit mm Motor Control Applications Third-generation IGBT Enhancement mode type High speed tf = 0.32 s (max) Low saturation voltage VCE (sat) = 2.7 V (max) FRD included between emitter and collector Maximum Ratings (Ta = 25 C) Char... See More ⇒

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GT15Q102

GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 High-Power Switching Applications Unit mm Motor Control Applications Third-generation IGBT Enhancement mode type High speed tf = 0.32 s (max) Low saturation voltage VCE (sat) = 2.7 V (max) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25 C) Cha... See More ⇒

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Specs: PM15CMA060, PM25CL1A120, PS21265-AP, PS21265-P, PSTG25HDT12, PSTG25HTT12, PSTG50HST12, PSTG75HST12, SGH80N60UFD, MSG50N350FH, NGD8201AN, FMG2G400US60, BT40T60ANF, GT40QR21, IHW15N120R2, IXBH15N140, IXBH15N160

Keywords - GT15Q102 transistor spec

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