GT15Q102 IGBT. Datasheet pdf. Equivalent
Type Designator: GT15Q102
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 170 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 50 nS
Package: TO247
GT15Q102 Transistor Equivalent Substitute - IGBT Cross-Reference Search
GT15Q102 Datasheet (PDF)
gt15q102.pdf
GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications Unit: mm Third-generation IGBT Enhancement mode type High speed: tf = 0.32 s (max) Low saturation voltage: VCE (sat) = 2.7 V (max) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-emitter voltage VCES 1200 V
gt15q311.pdf
GT15Q311 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q311 High Power Switching Applications Unit: mmMotor Control Applications Third-generation IGBT Enhancement mode type High speed: tf = 0.32 s (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Maximum Ratings (Ta = 25C) Char
gt15q301.pdf
GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 High-Power Switching Applications Unit: mmMotor Control Applications Third-generation IGBT Enhancement mode type High speed : tf = 0.32 s (max) Low saturation voltage : VCE (sat) = 2.7 V (max) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25C) Cha
Datasheet: PM15CMA060 , PM25CL1A120 , PS21265-AP , PS21265-P , PSTG25HDT12 , PSTG25HTT12 , PSTG50HST12 , PSTG75HST12 , NGD8201N , MSG50N350FH , NGD8201AN , FMG2G400US60 , BT40T60ANF , GT40QR21 , IHW15N120R2 , IXBH15N140 , IXBH15N160 .
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