All IGBT. GT15Q102 Datasheet

 

GT15Q102 IGBT. Datasheet pdf. Equivalent

Type Designator: GT15Q102

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 170

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 2.1

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 15

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 50

Package: 2-16C1C

GT15Q102 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT15Q102 Datasheet (PDF)

0.1. gt15q102.pdf Size:189K _1

GT15Q102
GT15Q102

GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications Unit: mm • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.32 μs (max) • Low saturation voltage: VCE (sat) = 2.7 V (max) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 1200 V

Datasheet: PM15CMA060 , PM25CL1A120 , PS21265-AP , PS21265-P , PSTG25HDT12 , PSTG25HTT12 , PSTG50HST12 , PSTG75HST12 , IRG4PH50UD , MSG50N350FH , NGD8201AN , FMG2G400US60 , BT40T60ANF , GT40QR21 , IHW15N120R2 , IXBH15N140 , IXBH15N160 .

 

 
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