MSG50N350FH
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSG50N350FH
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 328
W
|Vce|ⓘ - Tensión máxima colector-emisor: 330
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.15
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 5.5
V
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 81
nS
Coesⓘ - Capacitancia de salida, typ: 198
pF
Qgⓘ - Carga total de la puerta, typ: 175
nC
Paquete / Cubierta:
TO247
Búsqueda de reemplazo de MSG50N350FH
- IGBT
MSG50N350FH
Datasheet (PDF)
..1. Size:6593K 1
msg50n350fh.pdf 
MSG50N350FHFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collector
..2. Size:6593K cn maspower
msg50n350fh.pdf
MSG50N350FHFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collector
4.1. Size:6559K cn maspower
msg50n350fqc.pdf
MSG50N350FQCFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collector
5.1. Size:5258K cn maspower
msg50n350hlc0.pdf
MSG50N350HLC0Features High Current Capability Low Saturation Voltage:VCE(sat) = 1.55 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 350CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collecto
9.1. Size:8669K cn maspower
msg50t120fhw.pdf
MSG50T120FHW1200V Field stop Trench IGBTFeatures High Speed Switching & Low Power Loss High Input Impedance VCE(sat) = 2V @ IC = 50A High Input ImpedanceApplications PFC UPS InverterAbsolute Maximum RatingsParameter Symbol Value UnitCollector-emitter voltage V 1200CESVGate-emitter voltage V 20GEST =25C 100CCollector curre ICT
9.2. Size:7802K cn maspower
msg50t65fqc.pdf
MSG50T65FQCN-Channel IGBTFeatures Low gate charge Trench FS Technology Saturation voltage:VCE(sat),typ=1.6V@IC=50A and TC=25Applications General purpose inverter UPSAbsolute Ratings(Tc=25)ValueParameter Symbol UnitMSG50N65FQCCollector-Emmiter Voltage V 650 VceIC 100 A*Collector Current-continuous T=25T=10050 AIF100 ADiod
9.3. Size:6161K cn maspower
msg50t120fqw.pdf
MSG50T120FQWFeatures Extremely Efficient Trench with FieldStop Technology TJmax =175C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10s Short Circuit CapabilityApplications Solar Inverter UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage V 1200 VCES100 AIc T=25Collector Curren
9.4. Size:7751K cn maspower
msg50t65fhc.pdf
MSG50T65FHCFeatures Low gate charge Trench FS Technology, saturation voltage: V ,CE(sat)type =1.6V,I =50A and TC =25CC RoHS productApplications General purpose inverters UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage Vces 650 V100 AIc T=25*Collector Current-continuousT=10050 ACollector Curre
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