MSG50N350FH Todos los transistores

 ..1. Size:6593K  1
 msg50n350fh.pdf

MSG50N350FH Features High Current Capability Low Saturation Voltage VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 330 CES V Gate to Emitter Voltage V 30 GES T =25 100 C Collector Current I C T =100 50 A C Pulsed Collector

 ..2. Size:6593K  cn maspower
 msg50n350fh.pdf

MSG50N350FH Features High Current Capability Low Saturation Voltage VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 330 CES V Gate to Emitter Voltage V 30 GES T =25 100 C Collector Current I C T =100 50 A C Pulsed Collector

 4.1. Size:6559K  cn maspower
 msg50n350fqc.pdf

MSG50N350FQC Features High Current Capability Low Saturation Voltage VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 330 CES V Gate to Emitter Voltage V 30 GES T =25 100 C Collector Current I C T =100 50 A C Pulsed Collector

 5.1. Size:5258K  cn maspower
 msg50n350hlc0.pdf

MSG50N350HLC0 Features High Current Capability Low Saturation Voltage VCE(sat) = 1.55 V @ IC = 50 A High Input Impedance RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 350 CES V Gate to Emitter Voltage V 30 GES T =25 100 C Collector Current I C T =100 50 A C Pulsed Collecto

 9.1. Size:8669K  cn maspower
 msg50t120fhw.pdf

MSG50T120FHW 1200V Field stop Trench IGBT Features High Speed Switching & Low Power Loss High Input Impedance VCE(sat) = 2V @ IC = 50A High Input Impedance Applications PFC UPS Inverter Absolute Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V 1200 CES V Gate-emitter voltage V 20 GES T =25 C 100 C Collector curre I C T

 9.2. Size:7802K  cn maspower
 msg50t65fqc.pdf

MSG50T65FQC N-Channel IGBT Features Low gate charge Trench FS Technology Saturation voltage VCE(sat),typ=1.6V @IC=50A and TC=25 Applications General purpose inverter UPS Absolute Ratings(Tc=25 ) Value Parameter Symbol Unit MSG50N65FQC Collector-Emmiter Voltage V 650 V ce I C 100 A *Collector Current-continuous T=25 T=100 50 A I F 100 A Diod

 9.3. Size:6161K  cn maspower
 msg50t120fqw.pdf

MSG50T120FQW Features Extremely Efficient Trench with Field Stop Technology TJmax =175 C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 s Short Circuit Capability Applications Solar Inverter UPS Absolute Ratings Tc=25 Parameter Symbol Value Unit Collector-Emmiter Voltage V 1200 V CES 100 A Ic T=25 Collector Curren

 9.4. Size:7751K  cn maspower
 msg50t65fhc.pdf

MSG50T65FHC Features Low gate charge Trench FS Technology, saturation voltage V , CE(sat) type =1.6V,I =50A and TC =25 C C RoHS product Applications General purpose inverters UPS Absolute Ratings Tc=25 Parameter Symbol Value Unit Collector-Emmiter Voltage Vces 650 V 100 A Ic T=25 *Collector Current-continuous T=100 50 A Collector Curre