Справочник IGBT. MSG50N350FH

 

MSG50N350FH - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: MSG50N350FH
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 328 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 330 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.15 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 81 nS
   Coesⓘ - Выходная емкость, типовая: 198 pF
   Qgⓘ - Общий заряд затвора, typ: 175 nC
   Тип корпуса: TO247

 Аналог (замена) для MSG50N350FH

 

 

MSG50N350FH Datasheet (PDF)

 ..1. Size:6593K  1
 msg50n350fh.pdf

MSG50N350FH MSG50N350FH

MSG50N350FHFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collector

 ..2. Size:6593K  cn maspower
 msg50n350fh.pdf

MSG50N350FH MSG50N350FH

MSG50N350FHFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collector

 4.1. Size:6559K  cn maspower
 msg50n350fqc.pdf

MSG50N350FH MSG50N350FH

MSG50N350FQCFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collector

 5.1. Size:5258K  cn maspower
 msg50n350hlc0.pdf

MSG50N350FH MSG50N350FH

MSG50N350HLC0Features High Current Capability Low Saturation Voltage:VCE(sat) = 1.55 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 350CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collecto

 9.1. Size:8669K  cn maspower
 msg50t120fhw.pdf

MSG50N350FH MSG50N350FH

MSG50T120FHW1200V Field stop Trench IGBTFeatures High Speed Switching & Low Power Loss High Input Impedance VCE(sat) = 2V @ IC = 50A High Input ImpedanceApplications PFC UPS InverterAbsolute Maximum RatingsParameter Symbol Value UnitCollector-emitter voltage V 1200CESVGate-emitter voltage V 20GEST =25C 100CCollector curre ICT

 9.2. Size:7802K  cn maspower
 msg50t65fqc.pdf

MSG50N350FH MSG50N350FH

MSG50T65FQCN-Channel IGBTFeatures Low gate charge Trench FS Technology Saturation voltage:VCE(sat),typ=1.6V@IC=50A and TC=25Applications General purpose inverter UPSAbsolute Ratings(Tc=25)ValueParameter Symbol UnitMSG50N65FQCCollector-Emmiter Voltage V 650 VceIC 100 A*Collector Current-continuous T=25T=10050 AIF100 ADiod

 9.3. Size:6161K  cn maspower
 msg50t120fqw.pdf

MSG50N350FH MSG50N350FH

MSG50T120FQWFeatures Extremely Efficient Trench with FieldStop Technology TJmax =175C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10s Short Circuit CapabilityApplications Solar Inverter UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage V 1200 VCES100 AIc T=25Collector Curren

 9.4. Size:7751K  cn maspower
 msg50t65fhc.pdf

MSG50N350FH MSG50N350FH

MSG50T65FHCFeatures Low gate charge Trench FS Technology, saturation voltage: V ,CE(sat)type =1.6V,I =50A and TC =25CC RoHS productApplications General purpose inverters UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage Vces 650 V100 AIc T=25*Collector Current-continuousT=10050 ACollector Curre

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