MSG50N350FH IGBT. Datasheet pdf. Equivalent
Type Designator: MSG50N350FH
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 328 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.15 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 81 nS
Coesⓘ - Output Capacitance, typ: 198 pF
Qgⓘ - Total Gate Charge, typ: 175 nC
Package: TO247
MSG50N350FH Transistor Equivalent Substitute - IGBT Cross-Reference Search
MSG50N350FH Datasheet (PDF)
msg50n350fh.pdf
MSG50N350FHFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collector
msg50n350fh.pdf
MSG50N350FHFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collector
msg50n350fqc.pdf
MSG50N350FQCFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collector
msg50n350hlc0.pdf
MSG50N350HLC0Features High Current Capability Low Saturation Voltage:VCE(sat) = 1.55 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 350CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collecto
msg50t120fhw.pdf
MSG50T120FHW1200V Field stop Trench IGBTFeatures High Speed Switching & Low Power Loss High Input Impedance VCE(sat) = 2V @ IC = 50A High Input ImpedanceApplications PFC UPS InverterAbsolute Maximum RatingsParameter Symbol Value UnitCollector-emitter voltage V 1200CESVGate-emitter voltage V 20GEST =25C 100CCollector curre ICT
msg50t65fqc.pdf
MSG50T65FQCN-Channel IGBTFeatures Low gate charge Trench FS Technology Saturation voltage:VCE(sat),typ=1.6V@IC=50A and TC=25Applications General purpose inverter UPSAbsolute Ratings(Tc=25)ValueParameter Symbol UnitMSG50N65FQCCollector-Emmiter Voltage V 650 VceIC 100 A*Collector Current-continuous T=25T=10050 AIF100 ADiod
msg50t120fqw.pdf
MSG50T120FQWFeatures Extremely Efficient Trench with FieldStop Technology TJmax =175C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10s Short Circuit CapabilityApplications Solar Inverter UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage V 1200 VCES100 AIc T=25Collector Curren
msg50t65fhc.pdf
MSG50T65FHCFeatures Low gate charge Trench FS Technology, saturation voltage: V ,CE(sat)type =1.6V,I =50A and TC =25CC RoHS productApplications General purpose inverters UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage Vces 650 V100 AIc T=25*Collector Current-continuousT=10050 ACollector Curre
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
LIST
Last Update
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2