All IGBT. MSG50N350FH Datasheet

 

MSG50N350FH IGBT. Datasheet pdf. Equivalent

Type Designator: MSG50N350FH

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 328

Maximum Collector-Emitter Voltage |Vce|, V: 330

Collector-Emitter saturation Voltage |Vcesat|, V: 1.15

Maximum Gate-Emitter Voltage |Veg|, V: 30

Maximum Collector Current |Ic|, A: 100

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 81

Maximum Collector Capacity (Cc), pF: 198

Package: TO247

MSG50N350FH Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MSG50N350FH Datasheet (PDF)

0.1. msg50n350fh.pdf Size:6593K _1

MSG50N350FH
MSG50N350FH

MSG50N350FHFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collector

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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