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NGD8201AN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGD8201AN

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 125

Tensión colector-emisor (Vce): 440

Voltaje de saturación colector-emisor (Vce sat): 1.15

Tensión emisor-compuerta (Veg): 15

Corriente del colector DC máxima (Ic): 20

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 6000

Capacitancia de salida (Cc), pF: 80

Empaquetado / Estuche: DPAK

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NGD8201AN Datasheet (PDF)

1.1. ngd8201n ngd8201an.pdf Size:121K _1

NGD8201AN
NGD8201AN

NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 A

2.1. ngd8201a.pdf Size:123K _onsemi

NGD8201AN
NGD8201AN

NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 A

 3.1. ngd8201b.pdf Size:81K _onsemi

NGD8201AN
NGD8201AN

NGD8201B Ignition IGBT, 20 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VO

3.2. ngd8201bnt4g.pdf Size:81K _onsemi

NGD8201AN
NGD8201AN

NGD8201B Ignition IGBT, 20 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VO

Otros transistores... PS21265-AP , PS21265-P , PSTG25HDT12 , PSTG25HTT12 , PSTG50HST12 , PSTG75HST12 , GT15Q102 , MSG50N350FH , IXGP7N60B , FMG2G400US60 , BT40T60ANF , GT40QR21 , IHW15N120R2 , IXBH15N140 , IXBH15N160 , IXBH15N170 , IXBH9N140 .

 

 
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IGBT: IXBT15N170 | IXBH9N160 | IXBH9N140 | IXBH15N170 | IXBH15N160 | IXBH15N140 | IHW15N120R2 | GT40QR21 | BT40T60ANF | FMG2G400US60 |

 

 

 
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