Справочник IGBT. NGD8201AN

 

NGD8201AN - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: NGD8201AN

Тип управляющего канала: N

Максимальная рассеиваемая мощность (Pc): 125

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 440

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.15

Максимально допустимое напряжение эмиттер-затвор (Ueg): 15

Максимальный постоянный ток коллектора (Ic): 20

Максимальная температура перехода (Tj): 175

Время нарастания: 6000

Емкость коллектора (Cc), pf: 80

Корпус: DPAK

Аналог (замена) для NGD8201AN

 

 

NGD8201AN Datasheet (PDF)

1.1. ngd8201n ngd8201an.pdf Size:121K _1

NGD8201AN
NGD8201AN

NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 A

2.1. ngd8201a.pdf Size:123K _onsemi

NGD8201AN
NGD8201AN

NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 A

 3.1. ngd8201b.pdf Size:81K _onsemi

NGD8201AN
NGD8201AN

NGD8201B Ignition IGBT, 20 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VO

3.2. ngd8201bnt4g.pdf Size:81K _onsemi

NGD8201AN
NGD8201AN

NGD8201B Ignition IGBT, 20 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VO

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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