All IGBT. NGD8201AN Datasheet

 

NGD8201AN IGBT. Datasheet pdf. Equivalent

Type Designator: NGD8201AN

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 125

Maximum Collector-Emitter Voltage |Vce|, V: 440

Collector-Emitter saturation Voltage |Vcesat|, V: 1.15

Maximum Gate-Emitter Voltage |Veg|, V: 15

Maximum Collector Current |Ic|, A: 20

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 6000

Maximum Collector Capacity (Cc), pF: 80

Package: DPAK

NGD8201AN Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGD8201AN Datasheet (PDF)

0.1. ngd8201n ngd8201an.pdf Size:121K _1

NGD8201AN
NGD8201AN

NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 A

6.1. ngd8201a.pdf Size:123K _onsemi

NGD8201AN
NGD8201AN

NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 A

 7.1. ngd8201b.pdf Size:81K _onsemi

NGD8201AN
NGD8201AN

NGD8201B Ignition IGBT, 20 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VO

7.2. ngd8201bnt4g.pdf Size:81K _onsemi

NGD8201AN
NGD8201AN

NGD8201B Ignition IGBT, 20 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VO

Datasheet: PS21265-AP , PS21265-P , PSTG25HDT12 , PSTG25HTT12 , PSTG50HST12 , PSTG75HST12 , GT15Q102 , MSG50N350FH , IXGP7N60B , FMG2G400US60 , BT40T60ANF , GT40QR21 , IHW15N120R2 , IXBH15N140 , IXBH15N160 , IXBH15N170 , IXBH9N140 .

 

 
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