FMG2G400US60 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FMG2G400US60
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1136 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 400 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 8.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 240 nS
Qgⓘ - Carga total de la puerta, typ: 1200 nC
Paquete / Cubierta: MODULE
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FMG2G400US60 Datasheet (PDF)
fmg2g400us60.pdf
IGBTFMG2G400US60Molding Type ModuleGeneral DescriptionFairchild IGBT Power Module provides low conduction andswitching losses as well as short circuit ruggedness. Itsdesigned for the applications such as motor control,uninterrupted power supplies (UPS) and general inverterswhere short-circuit ruggedness is required.Features Short Circuit Rated Time; 10us @ TC =100C,
chfmg2gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHFMG2GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-74A)SC-74A* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capability.
Otros transistores... PS21265-P , PSTG25HDT12 , PSTG25HTT12 , PSTG50HST12 , PSTG75HST12 , GT15Q102 , MSG50N350FH , NGD8201AN , IKW50N60H3 , BT40T60ANF , GT40QR21 , IHW15N120R2 , IXBH15N140 , IXBH15N160 , IXBH15N170 , IXBH9N140 , IXBH9N160 .
History: IRGS4056D
History: IRGS4056D
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