FMG2G400US60 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FMG2G400US60  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 1136 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 400 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

trⓘ - Tiempo de subida, typ: 240 nS

Encapsulados: MODULE

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FMG2G400US60 datasheet

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 fmg2g400us60.pdf pdf_icon

FMG2G400US60

IGBT FMG2G400US60 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It s designed for the applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short-circuit ruggedness is required. Features Short Circuit Rated Time; 10us @ TC =100 C,

 9.1. Size:95K  chenmko
 chfmg2gp.pdf pdf_icon

FMG2G400US60

CHENMKO ENTERPRISE CO.,LTD CHFMG2GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-74A) SC-74A * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability.

Otros transistores... PS21265-P, PSTG25HDT12, PSTG25HTT12, PSTG50HST12, PSTG75HST12, GT15Q102, MSG50N350FH, NGD8201AN, FGH60N60SFD, BT40T60ANF, GT40QR21, IHW15N120R2, IXBH15N140, IXBH15N160, IXBH15N170, IXBH9N140, IXBH9N160