All IGBT. FMG2G400US60 Datasheet

 

FMG2G400US60 IGBT. Datasheet pdf. Equivalent


   Type Designator: FMG2G400US60
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1136 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 400 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 240 nS
   Qgⓘ - Total Gate Charge, typ: 1200 nC
   Package: MODULE

 FMG2G400US60 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FMG2G400US60 Datasheet (PDF)

 ..1. Size:568K  1
 fmg2g400us60.pdf

FMG2G400US60 FMG2G400US60

IGBTFMG2G400US60Molding Type ModuleGeneral DescriptionFairchild IGBT Power Module provides low conduction andswitching losses as well as short circuit ruggedness. Itsdesigned for the applications such as motor control,uninterrupted power supplies (UPS) and general inverterswhere short-circuit ruggedness is required.Features Short Circuit Rated Time; 10us @ TC =100C,

 9.1. Size:95K  chenmko
 chfmg2gp.pdf

FMG2G400US60 FMG2G400US60

CHENMKO ENTERPRISE CO.,LTDCHFMG2GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-74A)SC-74A* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capability.

Datasheet: PS21265-P , PSTG25HDT12 , PSTG25HTT12 , PSTG50HST12 , PSTG75HST12 , GT15Q102 , MSG50N350FH , NGD8201AN , RJH60F5DPQ-A0 , BT40T60ANF , GT40QR21 , IHW15N120R2 , IXBH15N140 , IXBH15N160 , IXBH15N170 , IXBH9N140 , IXBH9N160 .

 

 
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