IXBT15N170 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXBT15N170
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 25 nS
Coesⓘ - Capacitancia de salida, typ: 83 pF
Paquete / Cubierta: TO268
Búsqueda de reemplazo de IXBT15N170 - IGBT
Principales características: IXBT15N170
ixbh15n170 ixbt15n170.pdf
Advanced Technical Information VCES = 1700 V High Voltage, High Gain IXBH 15N170 BIMOSFETTM Monolithic IC25 = 25 A IXBT 15N170 Bipolar MOS Transistor VCE(sat) = 3.3 V Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25 C25 A TO-24
ixbt12n300.pdf
High Voltage, High Gain VCES = 3000V IXBT12N300 BIMOSFETTM Monolithic IXBH12N300 IC110 = 12A Bipolar MOS Transistor VCE(sat) 3.2V TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings E VCES TC = 25 C to 150 C 3000 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V TO-247 (IXBH) VGEM Transient 30 V IC25 TC = 25 C 30 A
ixbt16n170.pdf
High Voltage, High Gain VCES = 1700V IXBH16N170 BIMOSFETTM Monolithic IXBT16N170 IC90 = 16A Bipolar MOS Transistor VCE(sat) 3.3V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G VGES Continuous 20 V C (TAB) C E VGEM Transient 30 V IC25 TC = 25 C 40 A TO-268 (IXBT
ixbh16n170a ixbt16n170a.pdf
Advanced Technical Information High Voltage, High Gain IXBH 16N170A VCES = 1700 V BIMOSFETTM Monolithic IXBT 16N170A IC25 = 16 A Bipolar MOS Transistor VCE(sat) = 6.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1700 V G E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C1
Otros transistores... BT40T60ANF , GT40QR21 , IHW15N120R2 , IXBH15N140 , IXBH15N160 , IXBH15N170 , IXBH9N140 , IXBH9N160 , IKW30N60H3 , FGH40T65SHDF_F155 , FGPF30N45TTU , IGF40T120F , MBQ40T65FDSC , 2PG011 , BT60N60ANF , GT50N324 , MGD622 .
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