IXBT15N170 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXBT15N170
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 25 nS
Coesⓘ - Capacitancia de salida, typ: 83 pF
Qgⓘ - Carga total de la puerta, typ: 69 nC
Paquete / Cubierta: TO268
Búsqueda de reemplazo de IXBT15N170 IGBT
IXBT15N170 Datasheet (PDF)
ixbh15n170 ixbt15n170.pdf
Advanced Technical InformationVCES = 1700 VHigh Voltage, High GainIXBH 15N170BIMOSFETTM Monolithic IC25 = 25 AIXBT 15N170Bipolar MOS TransistorVCE(sat) = 3.3 VSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C25 ATO-24
ixbt12n300.pdf
High Voltage, High GainVCES = 3000VIXBT12N300BIMOSFETTM MonolithicIXBH12N300IC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-268 (IXBT)GSymbol Test Conditions Maximum RatingsEVCES TC = 25C to 150C 3000 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VTO-247 (IXBH)VGEM Transient 30 VIC25 TC = 25C 30 A
ixbt16n170.pdf
High Voltage, High GainVCES = 1700VIXBH16N170BIMOSFETTM MonolithicIXBT16N170IC90 = 16ABipolar MOS TransistorVCE(sat) 3.3VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGVGES Continuous 20 VC (TAB)CEVGEM Transient 30 VIC25 TC = 25C 40 ATO-268 (IXBT
ixbh16n170a ixbt16n170a.pdf
Advanced Technical InformationHigh Voltage, High Gain IXBH 16N170A VCES = 1700 VBIMOSFETTM MonolithicIXBT 16N170A IC25 = 16 ABipolar MOS TransistorVCE(sat) = 6.0 Vtfi(typ) = 50 nsSymbol Test Conditions Maximum Ratings TO-268(IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 MW 1700 VGEVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C1
Otros transistores... BT40T60ANF , GT40QR21 , IHW15N120R2 , IXBH15N140 , IXBH15N160 , IXBH15N170 , IXBH9N140 , IXBH9N160 , TGD30N40P , FGH40T65SHDF_F155 , FGPF30N45TTU , IGF40T120F , MBQ40T65FDSC , 2PG011 , BT60N60ANF , GT50N324 , MGD622 .
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