All IGBT. IXBT15N170 Datasheet

 

IXBT15N170 IGBT. Datasheet pdf. Equivalent

Type Designator: IXBT15N170

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 150

Maximum Collector-Emitter Voltage |Vce|, V: 1700

Collector-Emitter saturation Voltage |Vcesat|, V: 3.3

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 25

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 25

Maximum Collector Capacity (Cc), pF: 83

Package: TO268

IXBT15N170 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXBT15N170 IGBT. Datasheet pdf. Equivalent

Type Designator: IXBT15N170

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 150

Maximum Collector-Emitter Voltage |Vce|, V: 1700

Collector-Emitter saturation Voltage |Vcesat|, V: 3.3

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 25

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 25

Maximum Collector Capacity (Cc), pF: 83

Package: TO268

IXBT15N170 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXBT15N170 Datasheet (PDF)

0.1. ixbh15n170 ixbt15n170.pdf Size:155K _1

IXBT15N170
IXBT15N170

Advanced Technical InformationVCES = 1700 VHigh Voltage, High GainIXBH 15N170BIMOSFETTM Monolithic IC25 = 25 AIXBT 15N170Bipolar MOS TransistorVCE(sat) = 3.3 VSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C25 ATO-24

9.1. ixbt16n170a.pdf Size:50K _ixys

IXBT15N170
IXBT15N170

Advanced Technical InformationHigh Voltage, High Gain IXBH 16N170A VCES = 1700 VBIMOSFETTM MonolithicIXBT 16N170A IC25 = 16 ABipolar MOS TransistorVCE(sat) = 6.0 Vtfi(typ) = 50 nsSymbol Test Conditions Maximum Ratings TO-268(IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 MW 1700 VGEVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C1

9.2. ixbt12n300hv.pdf Size:246K _ixys

IXBT15N170
IXBT15N170

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBA12N300HVBIMOSFETTM MonolithicIXBT12N300HVIC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-263 (IXBA)GEC (Tab)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VTO-268 (IXBT)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VVGEM Trans

 9.3. ixbh10n170 ixbt10n170.pdf Size:596K _ixys

IXBT15N170
IXBT15N170

VCES = 1700 VHigh Voltage, High GainIXBH 10N170BIMOSFETTM Monolithic IC25 = 20 AIXBT 10N170Bipolar MOS TransistorVCE(sat) = 3.8 VPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C20 ATO-247 AD (IX

9.4. ixbh16n170a ixbt16n170a.pdf Size:51K _ixys

IXBT15N170
IXBT15N170

Advanced Technical InformationHigh Voltage, High Gain IXBH 16N170A VCES = 1700 VBIMOSFETTM MonolithicIXBT 16N170A IC25 = 16 ABipolar MOS TransistorVCE(sat) = 6.0 Vtfi(typ) = 50 nsSymbol Test Conditions Maximum Ratings TO-268(IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 MW 1700 VGEVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C1

 9.5. ixbt12n300.pdf Size:176K _ixys

IXBT15N170
IXBT15N170

High Voltage, High GainVCES = 3000VIXBT12N300BIMOSFETTM MonolithicIXBH12N300IC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-268 (IXBT)GSymbol Test Conditions Maximum RatingsEVCES TC = 25C to 150C 3000 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VTO-247 (IXBH)VGEM Transient 30 VIC25 TC = 25C 30 A

9.6. ixbt16n170.pdf Size:174K _ixys

IXBT15N170
IXBT15N170

High Voltage, High GainVCES = 1700VIXBH16N170BIMOSFETTM MonolithicIXBT16N170IC90 = 16ABipolar MOS TransistorVCE(sat) 3.3VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGVGES Continuous 20 VC (TAB)CEVGEM Transient 30 VIC25 TC = 25C 40 ATO-268 (IXBT

9.7. ixbt10n170.pdf Size:486K _ixys

IXBT15N170
IXBT15N170

VCES = 1700 VHigh Voltage, High GainIXBH 10N170BIMOSFETTM Monolithic IC25 = 20 AIXBT 10N170Bipolar MOS TransistorVCE(sat) = 3.8 VPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C20 ATO-247 AD (IX

9.8. ixbt16n170ahv.pdf Size:169K _ixys

IXBT15N170
IXBT15N170

Advance Technical InformationHigh Voltage, High GainVCES = 1700VIXBA16N170AHVBIMOSFETTM MonolithicIXBT16N170AHVIC25 = 16ABipolar MOS TransistorVCE(sat) 6.0VTO-263HV (IXBA)GEC (Tab)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VTO-268HV (IXBT)VCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VVGEM

Datasheet: BT40T60ANF , GT40QR21 , IHW15N120R2 , IXBH15N140 , IXBH15N160 , IXBH15N170 , IXBH9N140 , IXBH9N160 , GT15N101 , FGH40T65SHDF_F155 , FGPF30N45TTU , IGF40T120F , MBQ40T65FDSC , 2PG011 , BT60N60ANF , GT50N324 , MGD622 .

 

 
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