Справочник IGBT. IXBT15N170

 

IXBT15N170 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IXBT15N170

Тип управляющего канала: N

Максимальная рассеиваемая мощность (Pc): 150

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1700

Напряжение насыщения коллектор-эмиттер (Ucesat): 3.3

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 25

Максимальная температура перехода (Tj): 150

Время нарастания: 25

Емкость коллектора (Cc), pf: 83

Корпус: TO268

Аналог (замена) для IXBT15N170

 

 

IXBT15N170 Datasheet (PDF)

1.1. ixbh15n170 ixbt15n170.pdf Size:155K _1

IXBT15N170
IXBT15N170

Advanced Technical Information VCES = 1700 V High Voltage, High Gain IXBH 15N170 BIMOSFETTM Monolithic IC25 = 25 A IXBT 15N170 Bipolar MOS Transistor VCE(sat) = 3.3 V Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V G VGES Continuous ±20 V E (TAB) VGEM Transient ±30 V IC25 TC = 25°C25 A TO-24

5.1. ixbt16n170a.pdf Size:50K _ixys

IXBT15N170
IXBT15N170

Advanced Technical Information High Voltage, High Gain IXBH 16N170A VCES = 1700 V BIMOSFETTM Monolithic IXBT 16N170A IC25 = 16 A Bipolar MOS Transistor VCE(sat) = 6.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1700 V G E VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C1

5.2. ixbt12n300hv.pdf Size:246K _ixys

IXBT15N170
IXBT15N170

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBA12N300HV BIMOSFETTM Monolithic IXBT12N300HV IC110 = 12A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ TO-263 (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V TO-268 (IXBT) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 20 V VGEM Trans

 5.3. ixbh10n170 ixbt10n170.pdf Size:596K _ixys

IXBT15N170
IXBT15N170

VCES = 1700 V High Voltage, High Gain IXBH 10N170 BIMOSFETTM Monolithic IC25 = 20 A IXBT 10N170 Bipolar MOS Transistor VCE(sat) = 3.8 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V G VGES Continuous ±20 V E (TAB) VGEM Transient ±30 V IC25 TC = 25°C20 A TO-247 AD (IX

5.4. ixbh16n170a ixbt16n170a.pdf Size:51K _ixys

IXBT15N170
IXBT15N170

Advanced Technical Information High Voltage, High Gain IXBH 16N170A VCES = 1700 V BIMOSFETTM Monolithic IXBT 16N170A IC25 = 16 A Bipolar MOS Transistor VCE(sat) = 6.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1700 V G E VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C1

 5.5. ixbt12n300.pdf Size:176K _ixys

IXBT15N170
IXBT15N170

High Voltage, High Gain VCES = 3000V IXBT12N300 BIMOSFETTM Monolithic IXBH12N300 IC110 = 12A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.2V ≤ ≤ TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 3000 V C (Tab) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 20 V TO-247 (IXBH) VGEM Transient ± 30 V IC25 TC = 25°C 30 A

5.6. ixbt16n170.pdf Size:174K _ixys

IXBT15N170
IXBT15N170

High Voltage, High Gain VCES = 1700V IXBH16N170 BIMOSFETTM Monolithic IXBT16N170 IC90 = 16A Bipolar MOS Transistor ≤ VCE(sat) ≤ ≤ 3.3V ≤ ≤ TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V G VGES Continuous ± 20 V C (TAB) C E VGEM Transient ± 30 V IC25 TC = 25°C 40 A TO-268 (IXBT

5.7. ixbt10n170.pdf Size:486K _ixys

IXBT15N170
IXBT15N170

VCES = 1700 V High Voltage, High Gain IXBH 10N170 BIMOSFETTM Monolithic IC25 = 20 A IXBT 10N170 Bipolar MOS Transistor VCE(sat) = 3.8 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V G VGES Continuous ±20 V E (TAB) VGEM Transient ±30 V IC25 TC = 25°C20 A TO-247 AD (IX

5.8. ixbt16n170ahv.pdf Size:169K _ixys

IXBT15N170
IXBT15N170

Advance Technical Information High Voltage, High Gain VCES = 1700V IXBA16N170AHV BIMOSFETTM Monolithic IXBT16N170AHV IC25 = 16A Bipolar MOS Transistor  VCE(sat)   6.0V   TO-263HV (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V TO-268HV (IXBT) VCGR TJ = 25°C to 150°C, RGE = 1M 1700 V VGES Continuous ± 20 V VGEM

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