FGH40T65SHDF_F155 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGH40T65SHDF_F155
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 268 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 27 nS
Coesⓘ - Capacitancia de salida, typ: 70 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de FGH40T65SHDF_F155 IGBT
FGH40T65SHDF_F155 datasheet
fgh40t65shdf.pdf
IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SHDF Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer superior conduction www.onsemi.com and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as C induction heating and MWO. Features ... See More ⇒
fgh40t65shdf.pdf
FGH40T65SHDF 650 V 40 A IGBT TJ =175 C IGBT IGBT ... See More ⇒
Otros transistores... GT40QR21 , IHW15N120R2 , IXBH15N140 , IXBH15N160 , IXBH15N170 , IXBH9N140 , IXBH9N160 , IXBT15N170 , CRG75T60AK3HD , FGPF30N45TTU , IGF40T120F , MBQ40T65FDSC , 2PG011 , BT60N60ANF , GT50N324 , MGD622 , FGA40N65SMD .
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