FGH40T65SHDF_F155 Datasheet. Specs and Replacement

Type Designator: FGH40T65SHDF_F155  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 268 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

tr ⓘ - Rise Time, typ: 27 nS

Coesⓘ - Output Capacitance, typ: 70 pF

Package: TO247

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FGH40T65SHDF_F155 datasheet

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FGH40T65SHDF_F155

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SHDF Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer superior conduction www.onsemi.com and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as C induction heating and MWO. Features ... See More ⇒

 2.2. Size:900K  onsemi
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FGH40T65SHDF_F155

FGH40T65SHDF 650 V 40 A IGBT TJ =175 C IGBT IGBT ... See More ⇒

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FGH40T65SHDF_F155

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Specs: GT40QR21, IHW15N120R2, IXBH15N140, IXBH15N160, IXBH15N170, IXBH9N140, IXBH9N160, IXBT15N170, SGT40N60FD2PT, FGPF30N45TTU, IGF40T120F, MBQ40T65FDSC, 2PG011, BT60N60ANF, GT50N324, MGD622, FGA40N65SMD

Keywords - FGH40T65SHDF_F155 transistor spec

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