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FGH40T65SHDF_F155 Spec and Replacement


   Type Designator: FGH40T65SHDF_F155
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 268 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 70 pF
   Package: TO247

 FGH40T65SHDF_F155 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGH40T65SHDF_F155 specs

 2.1. Size:498K  1
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FGH40T65SHDF_F155

IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SHDF Description Using novel field stop IGBT technology, ON Semiconductor s new series of field stop 3rd generation IGBTs offer superior conduction www.onsemi.com and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as C induction heating and MWO. Features ... See More ⇒

 2.2. Size:900K  onsemi
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FGH40T65SHDF_F155

FGH40T65SHDF 650 V 40 A IGBT TJ =175 C IGBT IGBT ... See More ⇒

 3.1. Size:1508K  onsemi
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FGH40T65SHDF_F155

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Specs: GT40QR21 , IHW15N120R2 , IXBH15N140 , IXBH15N160 , IXBH15N170 , IXBH9N140 , IXBH9N160 , IXBT15N170 , CRG75T60AK3HD , FGPF30N45TTU , IGF40T120F , MBQ40T65FDSC , 2PG011 , BT60N60ANF , GT50N324 , MGD622 , FGA40N65SMD .

Keywords - FGH40T65SHDF_F155 transistor spec

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