FGPF30N45TTU Todos los transistores

 

FGPF30N45TTU - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGPF30N45TTU
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 50.4 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 450 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 120(Pulse) A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.35 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 57 nS
   Coesⓘ - Capacitancia de salida, typ: 88 pF
   Paquete / Cubierta: TO220F
 

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FGPF30N45TTU Datasheet (PDF)

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FGPF30N45TTU

April 2009FGPF30N45Ttm450V, 30A PDP Trench IGBTFeatures General Description High Current Capability Using Novel Trench IGBT Technology, Fairchilds new sesries oftrench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) =1.55V @ IC = 30Ations where low conduction and switching losses are essential. High input impedance Fast sw

 4.1. Size:605K  1
 fgpf30n45t.pdf pdf_icon

FGPF30N45TTU

April 2009FGPF30N45Ttm450V, 30A PDP Trench IGBTFeatures General Description High Current Capability Using Novel Trench IGBT Technology, Fairchilds new sesries oftrench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) =1.55V @ IC = 30Ations where low conduction and switching losses are essential. High input impedance Fast sw

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