FGPF30N45TTU - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGPF30N45TTU
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 50.4 W
|Vce|ⓘ - Tensión máxima colector-emisor: 450 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120(Pulse) A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.35 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 57 nS
Coesⓘ - Capacitancia de salida, typ: 88 pF
Paquete / Cubierta: TO220F
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FGPF30N45TTU Datasheet (PDF)
fgpf30n45ttu.pdf
April 2009 FGPF30N45T tm 450V, 30A PDP Trench IGBT Features General Description High Current Capability Using Novel Trench IGBT Technology, Fairchild s new sesries of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage VCE(sat) =1.55V @ IC = 30A tions where low conduction and switching losses are essential. High input impedance Fast sw
fgpf30n45t.pdf
April 2009 FGPF30N45T tm 450V, 30A PDP Trench IGBT Features General Description High Current Capability Using Novel Trench IGBT Technology, Fairchild s new sesries of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage VCE(sat) =1.55V @ IC = 30A tions where low conduction and switching losses are essential. High input impedance Fast sw
Otros transistores... IHW15N120R2 , IXBH15N140 , IXBH15N160 , IXBH15N170 , IXBH9N140 , IXBH9N160 , IXBT15N170 , FGH40T65SHDF_F155 , FGH75T65UPD , IGF40T120F , MBQ40T65FDSC , 2PG011 , BT60N60ANF , GT50N324 , MGD622 , FGA40N65SMD , FGL40N120AND .
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