FGPF30N45TTU Datasheet and Replacement
Type Designator: FGPF30N45TTU
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 50.4 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 450 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 120(Pulse) A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 57 nS
Coesⓘ - Output Capacitance, typ: 88 pF
Package: TO220F
FGPF30N45TTU substitution
FGPF30N45TTU Datasheet (PDF)
fgpf30n45ttu.pdf
April 2009FGPF30N45Ttm450V, 30A PDP Trench IGBTFeatures General Description High Current Capability Using Novel Trench IGBT Technology, Fairchilds new sesries oftrench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) =1.55V @ IC = 30Ations where low conduction and switching losses are essential. High input impedance Fast sw
fgpf30n45t.pdf
April 2009FGPF30N45Ttm450V, 30A PDP Trench IGBTFeatures General Description High Current Capability Using Novel Trench IGBT Technology, Fairchilds new sesries oftrench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) =1.55V @ IC = 30Ations where low conduction and switching losses are essential. High input impedance Fast sw
Datasheet: IHW15N120R2 , IXBH15N140 , IXBH15N160 , IXBH15N170 , IXBH9N140 , IXBH9N160 , IXBT15N170 , FGH40T65SHDF_F155 , TGAN20N135FD , IGF40T120F , MBQ40T65FDSC , 2PG011 , BT60N60ANF , GT50N324 , MGD622 , FGA40N65SMD , FGL40N120AND .
History: IHY20N135R3
Keywords - FGPF30N45TTU transistor datasheet
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History: IHY20N135R3
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