All IGBT. FGPF30N45TTU Datasheet

 

FGPF30N45TTU Datasheet and Replacement


   Type Designator: FGPF30N45TTU
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 50.4 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 450 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 120(Pulse) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 57 nS
   Coesⓘ - Output Capacitance, typ: 88 pF
   Qg ⓘ - Total Gate Charge, typ: 73 nC
   Package: TO220F
 

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FGPF30N45TTU Datasheet (PDF)

 ..1. Size:605K  1
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FGPF30N45TTU

April 2009FGPF30N45Ttm450V, 30A PDP Trench IGBTFeatures General Description High Current Capability Using Novel Trench IGBT Technology, Fairchilds new sesries oftrench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) =1.55V @ IC = 30Ations where low conduction and switching losses are essential. High input impedance Fast sw

 4.1. Size:605K  1
 fgpf30n45t.pdf pdf_icon

FGPF30N45TTU

April 2009FGPF30N45Ttm450V, 30A PDP Trench IGBTFeatures General Description High Current Capability Using Novel Trench IGBT Technology, Fairchilds new sesries oftrench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) =1.55V @ IC = 30Ations where low conduction and switching losses are essential. High input impedance Fast sw

Datasheet: IHW15N120R2 , IXBH15N140 , IXBH15N160 , IXBH15N170 , IXBH9N140 , IXBH9N160 , IXBT15N170 , FGH40T65SHDF_F155 , TGAN20N135FD , IGF40T120F , MBQ40T65FDSC , 2PG011 , BT60N60ANF , GT50N324 , MGD622 , FGA40N65SMD , FGL40N120AND .

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