FGPF30N45TTU Specs and Replacement
Type Designator: FGPF30N45TTU
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 50.4 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 450 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 120(Pulse) A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
tr ⓘ - Rise Time, typ: 57 nS
Coesⓘ - Output Capacitance, typ: 88 pF
Package: TO220F
FGPF30N45TTU Substitution
FGPF30N45TTU datasheet
fgpf30n45ttu.pdf
April 2009 FGPF30N45T tm 450V, 30A PDP Trench IGBT Features General Description High Current Capability Using Novel Trench IGBT Technology, Fairchild s new sesries of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage VCE(sat) =1.55V @ IC = 30A tions where low conduction and switching losses are essential. High input impedance Fast sw... See More ⇒
fgpf30n45t.pdf
April 2009 FGPF30N45T tm 450V, 30A PDP Trench IGBT Features General Description High Current Capability Using Novel Trench IGBT Technology, Fairchild s new sesries of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage VCE(sat) =1.55V @ IC = 30A tions where low conduction and switching losses are essential. High input impedance Fast sw... See More ⇒
Specs: IHW15N120R2 , IXBH15N140 , IXBH15N160 , IXBH15N170 , IXBH9N140 , IXBH9N160 , IXBT15N170 , FGH40T65SHDF_F155 , FGH75T65UPD , IGF40T120F , MBQ40T65FDSC , 2PG011 , BT60N60ANF , GT50N324 , MGD622 , FGA40N65SMD , FGL40N120AND .
History: GT50N324
Keywords - FGPF30N45TTU transistor spec
FGPF30N45TTU cross reference
FGPF30N45TTU equivalent finder
FGPF30N45TTU lookup
FGPF30N45TTU substitution
FGPF30N45TTU replacement
History: GT50N324
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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