MBQ40T65FDSC Todos los transistores

 

MBQ40T65FDSC IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MBQ40T65FDSC
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 375 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 54 nS
   Coesⓘ - Capacitancia de salida, typ: 209 pF
   Paquete / Cubierta: TO247
 

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Principales características: MBQ40T65FDSC

 ..1. Size:1591K  1
 mbq40t65fdsc.pdf pdf_icon

MBQ40T65FDSC

MBQ40T65FDSC 650V Field Stop IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field V CE(sat) = 1.95V @ I C = 40A Stop Trench IGBT Technology, which provides high switching E = 0.35mJ @ T = 25 C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1000

 6.1. Size:711K  1
 mbq40t65qes.pdf pdf_icon

MBQ40T65FDSC

MBQ40T65QES 650V Field Stop IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced Magnachip s Field V = 1.8V @ I = 40A CE(sat) C Stop Trench IGBT Technology, which provides high switching Maximum junction temperature 175 C speed and excellent quality. Applications Inverters Welding convert

 8.1. Size:1272K  1
 mbq40t120fds.pdf pdf_icon

MBQ40T65FDSC

MBQ40T120FDS High speed FieldStop Trench IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field VCE(sat) = 2.0V @ IC = 40A Stop Trench IGBT Technology, which provides low V , CE(SAT) High Input Impedance high switching performance and excellent quality. t = 100ns (typ.) rr This de

 8.2. Size:1275K  magnachip
 mbq40t120fes.pdf pdf_icon

MBQ40T65FDSC

MBQ40T120FES High speed FieldStop Trench IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field V = 2.0V @ I = 40A Stop Trench IGBT Technology, which provides low V , CE(sat) C CE(SAT) high switching performance and excellent quality. High Input Impedance trr = 100ns (typ.) This de

MOSTRAR MÁS

Otros transistores... IXBH15N160 , IXBH15N170 , IXBH9N140 , IXBH9N160 , IXBT15N170 , FGH40T65SHDF_F155 , FGPF30N45TTU , IGF40T120F , TGAN60N60F2DS , 2PG011 , BT60N60ANF , GT50N324 , MGD622 , FGA40N65SMD , FGL40N120AND , MM10G3T120B , MM120G3T65BM .

 

 
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