MBQ40T65FDSC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MBQ40T65FDSC

Código: 40T65FDSC

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 375

Tensión colector-emisor (Vce): 650

Voltaje de saturación colector-emisor (Vce sat): 1.95

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 80

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 54

Capacitancia de salida (Cc), pF: 209

Empaquetado / Estuche: TO247

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MBQ40T65FDSC Datasheet (PDF)

..1. mbq40t65fdsc.pdf Size:1591K _1

MBQ40T65FDSC650V Field Stop IGBTGeneral Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V CE(sat) = 1.95V @ I C = 40A Stop Trench IGBT Technology, which provides high switching E = 0.35mJ @ T = 25C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1000

8.1. mbq40t120fes.pdf Size:1275K _magnachip

MBQ40T120FES High speed FieldStop Trench IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 2.0V @ I = 40A Stop Trench IGBT Technology, which provides low V , CE(sat) C CE(SAT)high switching performance and excellent quality. High Input Impedance trr = 100ns (typ.) This de

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