MBQ40T65FDSC Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MBQ40T65FDSC  📄📄 

Tipo de transistor: IGBT + Diode

Código de marcado: 40T65FDSC

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 375 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃

|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V

trⓘ - Tiempo de subida, typ: 54 nS

Coesⓘ - Capacitancia de salida, typ: 209 pF

Qgⓘ - Carga total de la puerta, typ: 219 nC

Encapsulados: TO247

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MBQ40T65FDSC datasheet

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MBQ40T65FDSC

MBQ40T65FDSC 650V Field Stop IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field V CE(sat) = 1.95V @ I C = 40A Stop Trench IGBT Technology, which provides high switching E = 0.35mJ @ T = 25 C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1000

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MBQ40T65FDSC

MBQ40T65QES 650V Field Stop IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced Magnachip s Field V = 1.8V @ I = 40A CE(sat) C Stop Trench IGBT Technology, which provides high switching Maximum junction temperature 175 C speed and excellent quality. Applications Inverters Welding convert

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MBQ40T65FDSC

MBQ40T120FDS High speed FieldStop Trench IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field VCE(sat) = 2.0V @ IC = 40A Stop Trench IGBT Technology, which provides low V , CE(SAT) High Input Impedance high switching performance and excellent quality. t = 100ns (typ.) rr This de

 8.2. Size:1275K  magnachip
 mbq40t120fes.pdf pdf_icon

MBQ40T65FDSC

MBQ40T120FES High speed FieldStop Trench IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field V = 2.0V @ I = 40A Stop Trench IGBT Technology, which provides low V , CE(sat) C CE(SAT) high switching performance and excellent quality. High Input Impedance trr = 100ns (typ.) This de

MOSTRAR MÁS

Otros transistores... IXBH15N160, IXBH15N170, IXBH9N140, IXBH9N160, IXBT15N170, FGH40T65SHDF_F155, FGPF30N45TTU, IGF40T120F, IRG4PC50UD, 2PG011, BT60N60ANF, GT50N324, MGD622, FGA40N65SMD, FGL40N120AND, MM10G3T120B, MM120G3T65BM