All IGBT. MBQ40T65FDSC Datasheet

 

MBQ40T65FDSC IGBT. Datasheet pdf. Equivalent

Type Designator: MBQ40T65FDSC

Marking Code: 40T65FDSC

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 375

Maximum Collector-Emitter Voltage |Vce|, V: 650

Collector-Emitter saturation Voltage |Vcesat|, V: 1.95

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 80

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 54

Maximum Collector Capacity (Cc), pF: 209

Package: TO247

MBQ40T65FDSC Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MBQ40T65FDSC Datasheet (PDF)

0.1. mbq40t65fdsc.pdf Size:1591K _1

MBQ40T65FDSC
MBQ40T65FDSC

MBQ40T65FDSC650V Field Stop IGBTGeneral Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V CE(sat) = 1.95V @ I C = 40A Stop Trench IGBT Technology, which provides high switching E = 0.35mJ @ T = 25C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1000

8.1. mbq40t120fes.pdf Size:1275K _magnachip

MBQ40T65FDSC
MBQ40T65FDSC

MBQ40T120FES High speed FieldStop Trench IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 2.0V @ I = 40A Stop Trench IGBT Technology, which provides low V , CE(sat) C CE(SAT)high switching performance and excellent quality. High Input Impedance trr = 100ns (typ.) This de

 

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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