MM20G3T135B IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MM20G3T135B

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 268 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1350 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 18 nS

Encapsulados: TO247

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MM20G3T135B datasheet

 ..1. Size:342K  macmic
 mm20g3t135b.pdf pdf_icon

MM20G3T135B

MM20G3T135B 1350V 20A IGBT April 2020 Version 02 RoHS Compliant PRODUCT FEATURES 1350V IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery 1 2 3 APPLICATIONS Induction Heating 1.Gate Soft Switching Application

 8.1. Size:511K  macmic
 mm20g3r135b.pdf pdf_icon

MM20G3T135B

MM20G3R135B 1350V 20A RC- IGBT March 2018 Preliminary RoHS Compliant PRODUCT FEATURES 1350V Reverse conducting IGBT with monolithic body diode VCE(sat) with positive temperature coefficient Low switching losses Low EMI 1 2 3 APPLICATIONS HInductive cooking 1.Gate Inverterized microwave ovens 2.Collector 3.Emitter Resonant converters Soft switchi

Otros transistores... GT50N324, MGD622, FGA40N65SMD, FGL40N120AND, MM10G3T120B, MM120G3T65BM, MM15G3T120B, MM20G3R135B, GT30G122, MM25G3T120B, MM25G3U120BX, MM40G3T120B, MM40G3U120B, MM40G3U120BX, MM40G3U65B, MM40G3U65BN, MM50G3T120BM