MM20G3T135B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MM20G3T135B
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 268 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1350 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 18 nS
Paquete / Cubierta: TO247
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MM20G3T135B Datasheet (PDF)
mm20g3t135b.pdf
MM20G3T135B1350V 20A IGBTApril 2020 Version 02 RoHS CompliantPRODUCT FEATURES 1350V IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS Induction Heating1.Gate Soft Switching Application
mm20g3r135b.pdf
MM20G3R135B1350V 20A RC- IGBTMarch 2018 Preliminary RoHS CompliantPRODUCT FEATURES 1350V Reverse conducting IGBT with monolithic body diode VCE(sat) with positive temperature coefficient Low switching losses Low EMI123APPLICATIONS HInductive cooking1.Gate Inverterized microwave ovens2.Collector3.Emitter Resonant converters Soft switchi
Otros transistores... GT50N324 , MGD622 , FGA40N65SMD , FGL40N120AND , MM10G3T120B , MM120G3T65BM , MM15G3T120B , MM20G3R135B , STGW60V60DF , MM25G3T120B , MM25G3U120BX , MM40G3T120B , MM40G3U120B , MM40G3U120BX , MM40G3U65B , MM40G3U65BN , MM50G3T120BM .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2