MM20G3T135B Specs and Replacement

Type Designator: MM20G3T135B

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 268 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 18 nS

Package: TO247

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MM20G3T135B datasheet

 ..1. Size:342K  macmic
 mm20g3t135b.pdf pdf_icon

MM20G3T135B

MM20G3T135B 1350V 20A IGBT April 2020 Version 02 RoHS Compliant PRODUCT FEATURES 1350V IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery 1 2 3 APPLICATIONS Induction Heating 1.Gate Soft Switching Application... See More ⇒

 8.1. Size:511K  macmic
 mm20g3r135b.pdf pdf_icon

MM20G3T135B

MM20G3R135B 1350V 20A RC- IGBT March 2018 Preliminary RoHS Compliant PRODUCT FEATURES 1350V Reverse conducting IGBT with monolithic body diode VCE(sat) with positive temperature coefficient Low switching losses Low EMI 1 2 3 APPLICATIONS HInductive cooking 1.Gate Inverterized microwave ovens 2.Collector 3.Emitter Resonant converters Soft switchi... See More ⇒

Specs: GT50N324, MGD622, FGA40N65SMD, FGL40N120AND, MM10G3T120B, MM120G3T65BM, MM15G3T120B, MM20G3R135B, GT30G122, MM25G3T120B, MM25G3U120BX, MM40G3T120B, MM40G3U120B, MM40G3U120BX, MM40G3U65B, MM40G3U65BN, MM50G3T120BM

Keywords - MM20G3T135B transistor spec

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