MM60G3U65B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MM60G3U65B
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 85 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 28 nS
Paquete / Cubierta: TO247
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MM60G3U65B Datasheet (PDF)
mm60g3u65b.pdf
MM60G3U65B650V 60A IGBTDecember 2019 Version 01 RoHS CompliantPRODUCT FEATURES 650V IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical
mm60g60b.pdf
MM60G60B 600V 60A IGBT January 2013 PRELIMINARY RoHS Compliant FEATURES Low switching losses Low EMI Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS High frequency switching application Medical applications Motion/servo control UPS systems ABSOLUTE MAX
Otros transistores... MM25G3U120BX , MM40G3T120B , MM40G3U120B , MM40G3U120BX , MM40G3U65B , MM40G3U65BN , MM50G3T120BM , MM50G3U120BMX , IRG4PH50UD , MM75G3T65B , MMG100D170B , MMG100D170B6TC , MMG100H120H6HN , MMG100HB060B6EN , MMG100J120U6HN , MMG100J120U6T4N , MMG100J120U6TC .
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Recientemente añadidas las descripciónes de los transistores
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