MM60G3U65B Specs and Replacement

Type Designator: MM60G3U65B

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 85 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 28 nS

Package: TO247

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MM60G3U65B datasheet

 ..1. Size:330K  macmic
 mm60g3u65b.pdf pdf_icon

MM60G3U65B

MM60G3U65B 650V 60A IGBT December 2019 Version 01 RoHS Compliant PRODUCT FEATURES 650V IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery 1 2 3 APPLICATIONS High frequency switching application 1.Gate Medical... See More ⇒

 9.1. Size:274K  macmic
 mm60g60b.pdf pdf_icon

MM60G3U65B

MM60G60B 600V 60A IGBT January 2013 PRELIMINARY RoHS Compliant FEATURES Low switching losses Low EMI Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS High frequency switching application Medical applications Motion/servo control UPS systems ABSOLUTE MAX... See More ⇒

Specs: MM25G3U120BX, MM40G3T120B, MM40G3U120B, MM40G3U120BX, MM40G3U65B, MM40G3U65BN, MM50G3T120BM, MM50G3U120BMX, GT30F125, MM75G3T65B, MMG100D170B, MMG100D170B6TC, MMG100H120H6HN, MMG100HB060B6EN, MMG100J120U6HN, MMG100J120U6T4N, MMG100J120U6TC

Keywords - MM60G3U65B transistor spec

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