MM60G3U65B IGBT. Datasheet pdf. Equivalent
Type Designator: MM60G3U65B
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 300
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 85
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
Maximum G-E Threshold Voltag |VGE(th)|, V: 6
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 28
Total Gate Charge (Qg), typ, nC: 260
Package: TO247
MM60G3U65B Transistor Equivalent Substitute - IGBT Cross-Reference Search
MM60G3U65B Datasheet (PDF)
mm60g3u65b.pdf
MM60G3U65B650V 60A IGBTDecember 2019 Version 01 RoHS CompliantPRODUCT FEATURES 650V IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical
mm60g60b.pdf
MM60G60B 600V 60A IGBT January 2013 PRELIMINARY RoHS Compliant FEATURES Low switching losses Low EMI Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS High frequency switching application Medical applications Motion/servo control UPS systems ABSOLUTE MAX
Datasheet: MM25G3U120BX , MM40G3T120B , MM40G3U120B , MM40G3U120BX , MM40G3U65B , MM40G3U65BN , MM50G3T120BM , MM50G3U120BMX , CRG60T60AK3HD , MM75G3T65B , MMG100D170B , MMG100D170B6TC , MMG100H120H6HN , MMG100HB060B6EN , MMG100J120U6HN , MMG100J120U6T4N , MMG100J120U6TC .
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IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ