IRG4ZH50KD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 9.1680IRG4ZH50KD Surface Mountable ShortINSULATED GATE BIPOLAR TRANSISTOR WITHCircuit Rated UltraFast IGBTULTRAFAST SOFT RECOVERY DIODEFeaturesCn-channel High short circuit rating optimized for motor control, tsc = 10s,VCES = 1200VVCC = 720V, TJ = 125C, VGE = 15V IGBT co-packaged with HEXFREDTM ultrafast, ultra-softVCE(ON)typ = 2.79Vrecovery antiparallel dio

PD - 91729PRELIMINARYIRG4ZH71KD Surface MountableINSULATED GATE BIPOLAR TRANSISTOR WITHShort Circuit RatedULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeatures High short circuit rating optimized for motorCn-channel control, tsc =10s, VCC = 720V , TJ = 125C,VCES = 1200V VGE = 15V IGBT co-packaged with HEXFRED ultrafast,VCE(ON)typ = 2.89V ultra-soft-

PD - 9.1627AIRG4ZH70UDINSULATED GATE BIPOLAR TRANSISTOR WITH Surface MountableULTRAFAST SOFT RECOVERY DIODEUltraFast CoPack IGBTFeaturesCn-channel UltraFast IGBT optimized for high switching frequenciesVCES = 1200V IGBT co-packaged with HEXFRED ultrafast,ultra-soft recovery antiparallel diodes for use inbridge configurations VCE(ON)typ = 2.23V Low Gate ChargeG

PD -9.1668AIRG4ZC70UDINSULATED GATE BIPOLAR TRANSISTOR WITH Surface MountableULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBTFeaturesCn-channel UltraFast IGBT optimized for high switching frequenciesVCES = 600V IGBT co-packaged with HEXFRED ultrafast,ultra-soft recovery antiparallel diodes for use inbridge configurationsVCE(ON)typ = 1.5V Low gate chargeG Low

PD - 91723PRELIMINARYIRG4ZC71KD Surface MountableINSULATED GATE BIPOLAR TRANSISTOR WITHShort Circuit RatedULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeatures High short circuit rating optimized for motorCn-channel control, tsc =10s, VCC = 360V , TJ = 125C,VCES = 600V VGE = 15V IGBT co-packaged with HEXFRED ultrafast,VCE(ON)typ = 1.75V ultra-soft-r