Справочник IGBT. IRG4ZH50KD

 

IRG4ZH50KD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IRG4ZH50KD
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 210 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 54 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.79 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 43 nS
   Coesⓘ - Выходная емкость, типовая: 140 pF
   Qgⓘ - Общий заряд затвора, typ: 190 nC
   Тип корпуса: SMD10

 Аналог (замена) для IRG4ZH50KD

 

 

IRG4ZH50KD Datasheet (PDF)

 ..1. Size:243K  international rectifier
 irg4zh50kd.pdf

IRG4ZH50KD IRG4ZH50KD

PD - 9.1680IRG4ZH50KD Surface Mountable ShortINSULATED GATE BIPOLAR TRANSISTOR WITHCircuit Rated UltraFast IGBTULTRAFAST SOFT RECOVERY DIODEFeaturesCn-channel High short circuit rating optimized for motor control, tsc = 10s,VCES = 1200VVCC = 720V, TJ = 125C, VGE = 15V IGBT co-packaged with HEXFREDTM ultrafast, ultra-softVCE(ON)typ = 2.79Vrecovery antiparallel dio

 8.1. Size:234K  international rectifier
 irg4zh71kd.pdf

IRG4ZH50KD IRG4ZH50KD

PD - 91729PRELIMINARYIRG4ZH71KD Surface MountableINSULATED GATE BIPOLAR TRANSISTOR WITHShort Circuit RatedULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeatures High short circuit rating optimized for motorCn-channel control, tsc =10s, VCC = 720V , TJ = 125C,VCES = 1200V VGE = 15V IGBT co-packaged with HEXFRED ultrafast,VCE(ON)typ = 2.89V ultra-soft-

 8.2. Size:233K  international rectifier
 irg4zh70ud.pdf

IRG4ZH50KD IRG4ZH50KD

PD - 9.1627AIRG4ZH70UDINSULATED GATE BIPOLAR TRANSISTOR WITH Surface MountableULTRAFAST SOFT RECOVERY DIODEUltraFast CoPack IGBTFeaturesCn-channel UltraFast IGBT optimized for high switching frequenciesVCES = 1200V IGBT co-packaged with HEXFRED ultrafast,ultra-soft recovery antiparallel diodes for use inbridge configurations VCE(ON)typ = 2.23V Low Gate ChargeG

 9.1. Size:218K  international rectifier
 irg4zc70ud.pdf

IRG4ZH50KD IRG4ZH50KD

PD -9.1668AIRG4ZC70UDINSULATED GATE BIPOLAR TRANSISTOR WITH Surface MountableULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBTFeaturesCn-channel UltraFast IGBT optimized for high switching frequenciesVCES = 600V IGBT co-packaged with HEXFRED ultrafast,ultra-soft recovery antiparallel diodes for use inbridge configurationsVCE(ON)typ = 1.5V Low gate chargeG Low

 9.2. Size:224K  international rectifier
 irg4zc71kd.pdf

IRG4ZH50KD IRG4ZH50KD

PD - 91723PRELIMINARYIRG4ZC71KD Surface MountableINSULATED GATE BIPOLAR TRANSISTOR WITHShort Circuit RatedULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeatures High short circuit rating optimized for motorCn-channel control, tsc =10s, VCC = 360V , TJ = 125C,VCES = 600V VGE = 15V IGBT co-packaged with HEXFRED ultrafast,VCE(ON)typ = 1.75V ultra-soft-r

Другие IGBT... IRG4RC10K , IRG4RC10KD , IRG4RC10S , IRG4RC10SD , IRG4RC10U , IRG4RC10UD , IRG4ZC70UD , IRG4ZC71KD , JT075N065WED , IRG4ZH70UD , IRG4ZH71KD , IRGBC20S , IRGBC30S , IRGBC40S , IRGS14B40L , IRGS14C40L , IXDA20N120AS .

 

 
Back to Top