IRG4ZH50KD Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IRG4ZH50KD Specs and Replacement

   Type Designator: IRG4ZH50KD
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 210 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 54 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.79 V @25℃
   tr ⓘ - Rise Time, typ: 43 nS
   Coesⓘ - Output Capacitance, typ: 140 pF
   Package: SMD10

IRG4ZH50KD Substitution

- IGBT ⓘ Cross-Reference Search

IRG4ZH50KD datasheet

..1. Size:243K international rectifier
irg4zh50kd.pdf pdf_icon

PD - 9.1680 IRG4ZH50KD Surface Mountable Short INSULATED GATE BIPOLAR TRANSISTOR WITH Circuit Rated UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE Features C n-channel High short circuit rating optimized for motor control, tsc = 10 s, VCES = 1200V VCC = 720V, TJ = 125 C, VGE = 15V IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft VCE(ON)typ = 2.79V recovery antiparallel dio... See More ⇒

8.1. Size:234K international rectifier
irg4zh71kd.pdf pdf_icon

PD - 91729 PRELIMINARY IRG4ZH71KD Surface Mountable INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features High short circuit rating optimized for motor C n-channel control, tsc =10 s, VCC = 720V , TJ = 125 C, VCES = 1200V VGE = 15V IGBT co-packaged with HEXFRED ultrafast, VCE(ON)typ = 2.89V ultra-soft-... See More ⇒

8.2. Size:233K international rectifier
irg4zh70ud.pdf pdf_icon

PD - 9.1627A IRG4ZH70UD INSULATED GATE BIPOLAR TRANSISTOR WITH Surface Mountable ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C n-channel UltraFast IGBT optimized for high switching frequencies VCES = 1200V IGBT co-packaged with HEXFRED ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations VCE(ON)typ = 2.23V Low Gate Charge G ... See More ⇒

9.1. Size:218K international rectifier
irg4zc70ud.pdf pdf_icon

PD -9.1668A IRG4ZC70UD INSULATED GATE BIPOLAR TRANSISTOR WITH Surface Mountable ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C n-channel UltraFast IGBT optimized for high switching frequencies VCES = 600V IGBT co-packaged with HEXFRED ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations VCE(ON)typ = 1.5V Low gate charge G Low ... See More ⇒