IRG4ZH50KD Datasheet. Specs and Replacement

Type Designator: IRG4ZH50KD  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 210 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 54 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.79 V @25℃

tr ⓘ - Rise Time, typ: 43 nS

Coesⓘ - Output Capacitance, typ: 140 pF

Package: SMD10

  📄📄 Copy 

 IRG4ZH50KD Substitution

- IGBTⓘ Cross-Reference Search

 

IRG4ZH50KD datasheet

 ..1. Size:243K  international rectifier
 irg4zh50kd.pdf pdf_icon

IRG4ZH50KD

PD - 9.1680 IRG4ZH50KD Surface Mountable Short INSULATED GATE BIPOLAR TRANSISTOR WITH Circuit Rated UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE Features C n-channel High short circuit rating optimized for motor control, tsc = 10 s, VCES = 1200V VCC = 720V, TJ = 125 C, VGE = 15V IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft VCE(ON)typ = 2.79V recovery antiparallel dio... See More ⇒

 8.1. Size:234K  international rectifier
 irg4zh71kd.pdf pdf_icon

IRG4ZH50KD

PD - 91729 PRELIMINARY IRG4ZH71KD Surface Mountable INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features High short circuit rating optimized for motor C n-channel control, tsc =10 s, VCC = 720V , TJ = 125 C, VCES = 1200V VGE = 15V IGBT co-packaged with HEXFRED ultrafast, VCE(ON)typ = 2.89V ultra-soft-... See More ⇒

 8.2. Size:233K  international rectifier
 irg4zh70ud.pdf pdf_icon

IRG4ZH50KD

PD - 9.1627A IRG4ZH70UD INSULATED GATE BIPOLAR TRANSISTOR WITH Surface Mountable ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C n-channel UltraFast IGBT optimized for high switching frequencies VCES = 1200V IGBT co-packaged with HEXFRED ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations VCE(ON)typ = 2.23V Low Gate Charge G ... See More ⇒

 9.1. Size:218K  international rectifier
 irg4zc70ud.pdf pdf_icon

IRG4ZH50KD

PD -9.1668A IRG4ZC70UD INSULATED GATE BIPOLAR TRANSISTOR WITH Surface Mountable ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C n-channel UltraFast IGBT optimized for high switching frequencies VCES = 600V IGBT co-packaged with HEXFRED ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations VCE(ON)typ = 1.5V Low gate charge G Low ... See More ⇒

SHOW MORE

Specs: IRG4RC10K, IRG4RC10KD, IRG4RC10S, IRG4RC10SD, IRG4RC10U, IRG4RC10UD, IRG4ZC70UD, IRG4ZC71KD, IRGP4066D, IRG4ZH70UD, IRG4ZH71KD, IRGBC20S, IRGBC30S, IRGBC40S, IRGS14B40L, IRGS14C40L, IXDA20N120AS

Keywords - IRG4ZH50KD transistor spec

 IRG4ZH50KD cross reference
 IRG4ZH50KD equivalent finder
 IRG4ZH50KD lookup
 IRG4ZH50KD substitution
 IRG4ZH50KD replacement