IRGBC40S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGBC40S
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 160 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 50 nS
Coesⓘ - Capacitancia de salida, typ: 140 pF
Qgⓘ - Carga total de la puerta, typ: 62 nC
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de IRGBC40S - IGBT
IRGBC40S Datasheet (PDF)
irgbc40s.pdf
PD - 9.690AIRGBC40SINSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency curveVCE(sat) 1.8VG@VGE = 15V, IC = 31AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rect
irgbc40u.pdf
PD - 9.683AIRGBC40UINSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for high operating frequency (over 5kHz)See Fig. 1 for Current vs. Frequency curveVCE(sat) 3.0VG@VGE = 15V, IC = 20AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rectifier h
irgbc40k-s.pdf
PD - 9.1134IRGBC40K-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedUltraFast Fast IGBT.A=JKHAIC Short circuit rated - 10s @ 125C, VGE = 15VVCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over5kHz) See Fig. 1 for Current vs. Frequency VCE(sat) 3.2VGcurve@VGE = 15V, IC = 25AEn-channelDescr
irgbc40f.pdf
PD - 9.691AIRGBC40FINSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curveVCE(sat) 2.0VG@VGE = 15V, IC = 27AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Recti
irgbc40k.pdf
PD - 9.1073IRGBC40KINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedUltraFast IGBT.A=JKHAIC Short circuit rated - 10s @ 125C, VGE = 15VVCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over5kHz) See Fig. 1 for Current vs. Frequency VCE(sat) 3.2VGcurve@VGE = 15V, IC = 25AEn-channelDescription
irgbc40m.pdf
Preliminary Data Sheet PD - 9.1074IRGBC40MINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedFast IGBTFeaturesC Short circuit rated - 10s @ 125C, VGE = 15VVCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) VCE(sat) 3.0VG@VGE = 15V, IC = 24AEn-channelDescriptionInsulated Gate Bipola
irgbc40m-s.pdf
Preliminary Data Sheet PD - 9.1135IRGBC40M-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedFast IGBTFeaturesC Short circuit rated - 10s @ 125C, V = 15VGEVCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) VCE(sat) 3.0VG@VGE = 15V, IC = 24AEn-channelDescriptionInsulated Gate Bi
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Liste
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