IRGBC40S Todos los transistores

 ..1. Size:99K  international rectifier
 irgbc40s.pdf

PD - 9.690A IRGBC40S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C Switching-loss rating includes all "tail" losses VCES = 600V Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 1.8V G @VGE = 15V, IC = 31A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rect

 7.1. Size:96K  international rectifier
 irgbc40u.pdf

PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Switching-loss rating includes all "tail" losses VCES = 600V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 3.0V G @VGE = 15V, IC = 20A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier h

 7.2. Size:113K  international rectifier
 irgbc40k-s.pdf

PD - 9.1134 IRGBC40K-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast Fast IGBT .A=JKHAI C Short circuit rated - 10 s @ 125 C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency VCE(sat) 3.2V G curve @VGE = 15V, IC = 25A E n-channel Descr

 7.3. Size:98K  international rectifier
 irgbc40f.pdf

PD - 9.691A IRGBC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features C Switching-loss rating includes all "tail" losses VCES = 600V Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 2.0V G @VGE = 15V, IC = 27A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Recti

 7.4. Size:104K  international rectifier
 irgbc40k.pdf

PD - 9.1073 IRGBC40K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT .A=JKHAI C Short circuit rated - 10 s @ 125 C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency VCE(sat) 3.2V G curve @VGE = 15V, IC = 25A E n-channel Description

 7.5. Size:37K  international rectifier
 irgbc40m.pdf

Preliminary Data Sheet PD - 9.1074 IRGBC40M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features C Short circuit rated - 10 s @ 125 C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) VCE(sat) 3.0V G @VGE = 15V, IC = 24A E n-channel Description Insulated Gate Bipola

 7.6. Size:45K  international rectifier
 irgbc40m-s.pdf

Preliminary Data Sheet PD - 9.1135 IRGBC40M-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features C Short circuit rated - 10 s @ 125 C, V = 15V GE VCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) VCE(sat) 3.0V G @VGE = 15V, IC = 24A E n-channel Description Insulated Gate Bi