IRGBC40S Todos los transistores

 

IRGBC40S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRGBC40S
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 160 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 50 nS
   Coesⓘ - Capacitancia de salida, typ: 140 pF
   Paquete / Cubierta: TO220AB
     - Selección de transistores por parámetros

 

IRGBC40S Datasheet (PDF)

 ..1. Size:99K  international rectifier
irgbc40s.pdf pdf_icon

IRGBC40S

PD - 9.690AIRGBC40SINSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency curveVCE(sat) 1.8VG@VGE = 15V, IC = 31AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rect

 7.1. Size:96K  international rectifier
irgbc40u.pdf pdf_icon

IRGBC40S

PD - 9.683AIRGBC40UINSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for high operating frequency (over 5kHz)See Fig. 1 for Current vs. Frequency curveVCE(sat) 3.0VG@VGE = 15V, IC = 20AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rectifier h

 7.2. Size:113K  international rectifier
irgbc40k-s.pdf pdf_icon

IRGBC40S

PD - 9.1134IRGBC40K-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedUltraFast Fast IGBT.A=JKHAIC Short circuit rated - 10s @ 125C, VGE = 15VVCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over5kHz) See Fig. 1 for Current vs. Frequency VCE(sat) 3.2VGcurve@VGE = 15V, IC = 25AEn-channelDescr

 7.3. Size:98K  international rectifier
irgbc40f.pdf pdf_icon

IRGBC40S

PD - 9.691AIRGBC40FINSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curveVCE(sat) 2.0VG@VGE = 15V, IC = 27AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Recti

Otros transistores... IRG4RC10UD , IRG4ZC70UD , IRG4ZC71KD , IRG4ZH50KD , IRG4ZH70UD , IRG4ZH71KD , IRGBC20S , IRGBC30S , TGD30N40P , IRGS14B40L , IRGS14C40L , IXDA20N120AS , IXDH20N120 , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 , IXDH30N120D1 .

History: HGTP12N60A4 | HGT1S12N60A4S | HGT1S12N60C3D | RJH60D0DPK

 

 
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