All IGBT. IRGBC40S Datasheet

 

IRGBC40S IGBT. Datasheet pdf. Equivalent

Type Designator: IRGBC40S

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 160W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Maximum Gate-Emitter Voltage |Veg|, V: 10V

Maximum Collector Current |Ic|, A: 50A

Maximum Junction Temperature (Tj), °C: 175

Package: TO220AB

IRGBC40S Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGBC40S Datasheet (PDF)

1.1. irgbc40s.pdf Size:99K _international_rectifier

IRGBC40S
IRGBC40S

PD - 9.690A IRGBC40S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C Switching-loss rating includes all "tail" losses VCES = 600V Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 1.8V G @VGE = 15V, IC = 31A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier hav

3.1. irgbc40f.pdf Size:98K _international_rectifier

IRGBC40S
IRGBC40S

PD - 9.691A IRGBC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features C Switching-loss rating includes all "tail" losses VCES = 600V Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 2.0V G @VGE = 15V, IC = 27A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have

3.2. irgbc40m.pdf Size:37K _international_rectifier

IRGBC40S
IRGBC40S

Preliminary Data Sheet PD - 9.1074 IRGBC40M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features C Short circuit rated - 10s @ 125C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) VCE(sat) ? 3.0V G @VGE = 15V, IC = 24A E n-channel Description Insulated Gate Bipolar Transistors

3.3. irgbc40u.pdf Size:96K _international_rectifier

IRGBC40S
IRGBC40S

PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Switching-loss rating includes all "tail" losses VCES = 600V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.0V G @VGE = 15V, IC = 20A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have high

3.4. irgbc40k.pdf Size:104K _international_rectifier

IRGBC40S
IRGBC40S

PD - 9.1073 IRGBC40K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT .A=JKHAI C Short circuit rated - 10s @ 125C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency VCE(sat) ? 3.2V G curve @VGE = 15V, IC = 25A E n-channel Description Insulated Ga

3.5. irgbc40m-s.pdf Size:45K _international_rectifier

IRGBC40S
IRGBC40S

Preliminary Data Sheet PD - 9.1135 IRGBC40M-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features C Short circuit rated - 10s @ 125C, V = 15V GE VCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) VCE(sat) ? 3.0V G @VGE = 15V, IC = 24A E n-channel Description Insulated Gate Bipolar Transis

3.6. irgbc40k-s.pdf Size:113K _international_rectifier

IRGBC40S
IRGBC40S

PD - 9.1134 IRGBC40K-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast Fast IGBT .A=JKHAI C Short circuit rated - 10s @ 125C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency VCE(sat) ? 3.2V G curve @VGE = 15V, IC = 25A E n-channel Description Insul

Datasheet: IRG4RC10UD , IRG4ZC70UD , IRG4ZC71KD , IRG4ZH50KD , IRG4ZH70UD , IRG4ZH71KD , IRGBC20S , IRGBC30S , GT15N101 , IRGS14B40L , IRGS14C40L , IXDA20N120AS , IXDH20N120 , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 , IXDH30N120D1 .

 


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