IRGBC40S - аналоги и описание IGBT

PD - 9.690A IRGBC40S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C Switching-loss rating includes all "tail" losses VCES = 600V Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 1.8V G @VGE = 15V, IC = 31A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rect

PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Switching-loss rating includes all "tail" losses VCES = 600V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 3.0V G @VGE = 15V, IC = 20A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier h

PD - 9.1134 IRGBC40K-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast Fast IGBT .A=JKHAI C Short circuit rated - 10 s @ 125 C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency VCE(sat) 3.2V G curve @VGE = 15V, IC = 25A E n-channel Descr

PD - 9.691A IRGBC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features C Switching-loss rating includes all "tail" losses VCES = 600V Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 2.0V G @VGE = 15V, IC = 27A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Recti

PD - 9.1073 IRGBC40K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT .A=JKHAI C Short circuit rated - 10 s @ 125 C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency VCE(sat) 3.2V G curve @VGE = 15V, IC = 25A E n-channel Description

Preliminary Data Sheet PD - 9.1074 IRGBC40M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features C Short circuit rated - 10 s @ 125 C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) VCE(sat) 3.0V G @VGE = 15V, IC = 24A E n-channel Description Insulated Gate Bipola

Preliminary Data Sheet PD - 9.1135 IRGBC40M-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features C Short circuit rated - 10 s @ 125 C, V = 15V GE VCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) VCE(sat) 3.0V G @VGE = 15V, IC = 24A E n-channel Description Insulated Gate Bi