IRGBC40S - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IRGBC40S
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 160 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 50 nS
Coesⓘ - Выходная емкость, типовая: 140 pF
Тип корпуса: TO220AB
IRGBC40S Datasheet (PDF)
irgbc40s.pdf
PD - 9.690AIRGBC40SINSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency curveVCE(sat) 1.8VG@VGE = 15V, IC = 31AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rect
irgbc40u.pdf
PD - 9.683AIRGBC40UINSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for high operating frequency (over 5kHz)See Fig. 1 for Current vs. Frequency curveVCE(sat) 3.0VG@VGE = 15V, IC = 20AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rectifier h
irgbc40k-s.pdf
PD - 9.1134IRGBC40K-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedUltraFast Fast IGBT.A=JKHAIC Short circuit rated - 10s @ 125C, VGE = 15VVCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over5kHz) See Fig. 1 for Current vs. Frequency VCE(sat) 3.2VGcurve@VGE = 15V, IC = 25AEn-channelDescr
irgbc40f.pdf
PD - 9.691AIRGBC40FINSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curveVCE(sat) 2.0VG@VGE = 15V, IC = 27AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Recti
irgbc40k.pdf
PD - 9.1073IRGBC40KINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedUltraFast IGBT.A=JKHAIC Short circuit rated - 10s @ 125C, VGE = 15VVCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over5kHz) See Fig. 1 for Current vs. Frequency VCE(sat) 3.2VGcurve@VGE = 15V, IC = 25AEn-channelDescription
irgbc40m.pdf
Preliminary Data Sheet PD - 9.1074IRGBC40MINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedFast IGBTFeaturesC Short circuit rated - 10s @ 125C, VGE = 15VVCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) VCE(sat) 3.0VG@VGE = 15V, IC = 24AEn-channelDescriptionInsulated Gate Bipola
irgbc40m-s.pdf
Preliminary Data Sheet PD - 9.1135IRGBC40M-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedFast IGBTFeaturesC Short circuit rated - 10s @ 125C, V = 15VGEVCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) VCE(sat) 3.0VG@VGE = 15V, IC = 24AEn-channelDescriptionInsulated Gate Bi
Другие IGBT... IRG4RC10UD , IRG4ZC70UD , IRG4ZC71KD , IRG4ZH50KD , IRG4ZH70UD , IRG4ZH71KD , IRGBC20S , IRGBC30S , IKW50N60T , IRGS14B40L , IRGS14C40L , IXDA20N120AS , IXDH20N120 , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 , IXDH30N120D1 .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2