MMG600WB120B6E4N Todos los transistores

 

MMG600WB120B6E4N IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMG600WB120B6E4N

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 3125 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 915 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃

trⓘ - Tiempo de subida, typ: 90 nS

Encapsulados: MODULE

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MMG600WB120B6E4N datasheet

 0.1. Size:1838K  macmic
mmg600wb120b6e4n.pdf pdf_icon

MMG600WB120B6E4N

MMG600WB120B6E4N 1200V 600A IGBT Module May 2016 Preliminary RoHS Compliant PRODUCT FEATURES IGBT4 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense included APPLICATIONS AC motor control Motion/servo

 1.1. Size:220K  macmic
mmg600wb120b6tc.pdf pdf_icon

MMG600WB120B6E4N

MMG600WB120B6TC 1200V 600A IGBT Module November 2020 Version 01 RoHS Compliant PRODUCT FEATURES IGBT CHIP(Trench+FS) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense included APPLICATIONS AC motor control Motion/servo control Inv

 5.1. Size:1858K  macmic
mmg600wb170b.pdf pdf_icon

MMG600WB120B6E4N

MMG600WB170B 1700V 600A IGBT Module February 2016 Version 01 RoHS Compliant PRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(Highly rugged SPT+ design) VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Free wheeling diodes with fast and soft reverse recovery Temperature sense included APPLI

 5.2. Size:404K  macmic
mmg600wb170b6en.pdf pdf_icon

MMG600WB120B6E4N

MMG600WB170B6EN 1700V 600A IGBT Module September 2015 Version 0 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery Temperature sense included APPLICATIONS

Otros transistores... MMG50W120XB6TC , MMG50W120XT6TC , MMG600K060U6EN , MMG600WB060DAK6EN , MMG600WB065B6EN , MMG600WB065B6TC , MMG600WB065TLA6EN , MMG600WB065TLB6EN , SGT40N60NPFDPN , MMG600WB120B6TC , MMG600WB170B , MMG600WB170B6E4N , MMG600WB170B6EN , MMG600WE120B6E4N , MMG75H060XB6EN , MMG75H120X6TC , MMG75HB060B6EN .

 

 

 


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