MMG600WB120B6E4N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG600WB120B6E4N
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 3125
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 915
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.75
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.4
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 90
Carga total de la puerta (Qg), typ, nC: 4400
Paquete / Cubierta: MODULE
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MMG600WB120B6E4N Datasheet (PDF)
mmg600wb120b6e4n.pdf
MMG600WB120B6E4N1200V 600A IGBT ModuleMay 2016 Preliminary RoHS CompliantPRODUCT FEATURES IGBT4 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS AC motor control Motion/servo
mmg600wb120b6tc.pdf
MMG600WB120B6TC1200V 600A IGBT ModuleNovember 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+FS) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS AC motor control Motion/servo control Inv
mmg600wb170b6en.pdf
MMG600WB170B6EN1700V 600A IGBT ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS
mmg600wb170b.pdf
MMG600WB170B1700V 600A IGBT ModuleFebruary 2016 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(Highly rugged SPT+ design) VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLI
mmg600wb170b6e4n.pdf
MMG600WB170B6E4N1700V 600A IGBT ModuleMarch 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT4 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS
Otros transistores... MMG50W120XB6TC , MMG50W120XT6TC , MMG600K060U6EN , MMG600WB060DAK6EN , MMG600WB065B6EN , MMG600WB065B6TC , MMG600WB065TLA6EN , MMG600WB065TLB6EN , IRGP4063D , MMG600WB120B6TC , MMG600WB170B , MMG600WB170B6E4N , MMG600WB170B6EN , MMG600WE120B6E4N , MMG75H060XB6EN , MMG75H120X6TC , MMG75HB060B6EN .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JNG8T60FT1 | JNG80T60LS | JNG75T65HYU2 | JNG75T65HXU1 | JNG75T120QZU1 | JNG75T120QS1 | JNG75T120LS | JNG60T60HS | JNG5T65DS1 | JNG50N120QS1 | JNG50N120QFU1