MMG600WB120B6E4N Todos los transistores

 

MMG600WB120B6E4N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMG600WB120B6E4N
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 3125 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 915 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 90 nS
   Qgⓘ - Carga total de la puerta, typ: 4400 nC
   Paquete / Cubierta: MODULE
 

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MMG600WB120B6E4N Datasheet (PDF)

 0.1. Size:1838K  macmic
 mmg600wb120b6e4n.pdf pdf_icon

MMG600WB120B6E4N

MMG600WB120B6E4N1200V 600A IGBT ModuleMay 2016 Preliminary RoHS CompliantPRODUCT FEATURES IGBT4 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS AC motor control Motion/servo

 1.1. Size:220K  macmic
 mmg600wb120b6tc.pdf pdf_icon

MMG600WB120B6E4N

MMG600WB120B6TC1200V 600A IGBT ModuleNovember 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+FS) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS AC motor control Motion/servo control Inv

 5.1. Size:1858K  macmic
 mmg600wb170b.pdf pdf_icon

MMG600WB120B6E4N

MMG600WB170B1700V 600A IGBT ModuleFebruary 2016 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(Highly rugged SPT+ design) VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLI

 5.2. Size:404K  macmic
 mmg600wb170b6en.pdf pdf_icon

MMG600WB120B6E4N

MMG600WB170B6EN1700V 600A IGBT ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS

MOSTRAR MÁS

Otros transistores... MMG50W120XB6TC , MMG50W120XT6TC , MMG600K060U6EN , MMG600WB060DAK6EN , MMG600WB065B6EN , MMG600WB065B6TC , MMG600WB065TLA6EN , MMG600WB065TLB6EN , RJP30H1DPD , MMG600WB120B6TC , MMG600WB170B , MMG600WB170B6E4N , MMG600WB170B6EN , MMG600WE120B6E4N , MMG75H060XB6EN , MMG75H120X6TC , MMG75HB060B6EN .

History: IGW50N65F5A | MMG35CB120X6TC

 

 
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