MMG600WB120B6E4N IGBT. Datasheet pdf. Equivalent
Type Designator: MMG600WB120B6E4N
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 3125 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 915 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 90 nS
Qgⓘ - Total Gate Charge, typ: 4400 nC
Package: MODULE
MMG600WB120B6E4N Transistor Equivalent Substitute - IGBT Cross-Reference Search
MMG600WB120B6E4N Datasheet (PDF)
mmg600wb120b6e4n.pdf
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mmg600wb120b6tc.pdf
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mmg600wb170b.pdf
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mmg600wb170b6en.pdf
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mmg600wb170b6e4n.pdf
MMG600WB170B6E4N1700V 600A IGBT ModuleMarch 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT4 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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