MMG600WB120B6E4N Даташит. Аналоги. Параметры и характеристики.
Наименование: MMG600WB120B6E4N
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 3125 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 915 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.75 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.4 V
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 90 nS
Qg ⓘ - Общий заряд затвора, typ: 4400 nC
Тип корпуса: MODULE
Аналог (замена) для MMG600WB120B6E4N
MMG600WB120B6E4N Datasheet (PDF)
mmg600wb120b6e4n.pdf

MMG600WB120B6E4N1200V 600A IGBT ModuleMay 2016 Preliminary RoHS CompliantPRODUCT FEATURES IGBT4 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS AC motor control Motion/servo
mmg600wb120b6tc.pdf

MMG600WB120B6TC1200V 600A IGBT ModuleNovember 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+FS) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS AC motor control Motion/servo control Inv
mmg600wb170b.pdf

MMG600WB170B1700V 600A IGBT ModuleFebruary 2016 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(Highly rugged SPT+ design) VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLI
mmg600wb170b6en.pdf

MMG600WB170B6EN1700V 600A IGBT ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS
Другие IGBT... MMG50W120XB6TC , MMG50W120XT6TC , MMG600K060U6EN , MMG600WB060DAK6EN , MMG600WB065B6EN , MMG600WB065B6TC , MMG600WB065TLA6EN , MMG600WB065TLB6EN , RJP30H1DPD , MMG600WB120B6TC , MMG600WB170B , MMG600WB170B6E4N , MMG600WB170B6EN , MMG600WE120B6E4N , MMG75H060XB6EN , MMG75H120X6TC , MMG75HB060B6EN .
History: VS-GT105LA120UX
History: VS-GT105LA120UX



Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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