MMGT200Q120B6C Todos los transistores

 

MMGT200Q120B6C - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMGT200Q120B6C

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1250

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 1.75

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 320

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 70

Empaquetado / Estuche: MODULE

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MMGT200Q120B6C Datasheet (PDF)

..1. mmgt200q120b6c.pdf Size:1334K _macmic

MMGT200Q120B6C
MMGT200Q120B6C

MMGT200Q120B6C1200V 200A IGBT ModuleJune 2018 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPP

9.1. mmgt25h120xb6c.pdf Size:162K _macmic

MMGT200Q120B6C
MMGT200Q120B6C

MMGT25H120XB6C1200V 25A PIM ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba

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