MMGT200Q120B6C IGBT. Datasheet pdf. Equivalent
Type Designator: MMGT200Q120B6C
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 320 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 70 nS
Package: MODULE
MMGT200Q120B6C Transistor Equivalent Substitute - IGBT Cross-Reference Search
MMGT200Q120B6C Datasheet (PDF)
mmgt200q120b6c.pdf
MMGT200Q120B6C1200V 200A IGBT ModuleJune 2018 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPP
mmgt25h120xb6c.pdf
MMGT25H120XB6C1200V 25A PIM ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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