All IGBT. MMGT200Q120B6C Datasheet

 

MMGT200Q120B6C IGBT. Datasheet pdf. Equivalent

Type Designator: MMGT200Q120B6C

Type: IGBT

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 1250

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 320

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.75

Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5

Maximum Junction Temperature (Tj), ℃: 175

Rise Time (tr), typ, nS: 70

Total Gate Charge (Qg), typ, nC: 980

Package: MODULE

MMGT200Q120B6C Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MMGT200Q120B6C Datasheet (PDF)

 ..1. Size:1334K  macmic
 mmgt200q120b6c.pdf

MMGT200Q120B6C MMGT200Q120B6C

MMGT200Q120B6C1200V 200A IGBT ModuleJune 2018 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPP

 9.1. Size:162K  macmic
 mmgt25h120xb6c.pdf

MMGT200Q120B6C MMGT200Q120B6C

MMGT25H120XB6C1200V 25A PIM ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba

Datasheet: MMG75WD120XT6TC , MMG800D060B6EN , MMGT100J120UZ6C , MMGT100W120X6C , MMGT100WD120XB6C , MMGT10CB120XB6C , MMGT15CB120XB6C , MMGT15H120XB6C , FGH40N60UFD , MMGT25H120XB6C , MMGT40H120XB6C , MMGT50H120X6C , MMGT50W120X6C , MMGT50W120XB6C , MMGT75H120X6C , MMGT75W120X6C , MMGT75W120XB6C .

 

 
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