MMGT200Q120B6C Datasheet and Replacement
Type Designator: MMGT200Q120B6C
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 1250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 320 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 70 nS
Package: MODULE
MMGT200Q120B6C Transistor Equivalent Substitute - IGBT Cross-Reference Search
MMGT200Q120B6C Datasheet (PDF)
mmgt200q120b6c.pdf
MMGT200Q120B6C 1200V 200A IGBT Module June 2018 Version 01 RoHS Compliant PRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APP... See More ⇒
mmgt25h120xb6c.pdf
MMGT25H120XB6C 1200V 25A PIM Module September 2015 Version 0 RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba... See More ⇒
Datasheet: MMG75WD120XT6TC , MMG800D060B6EN , MMGT100J120UZ6C , MMGT100W120X6C , MMGT100WD120XB6C , MMGT10CB120XB6C , MMGT15CB120XB6C , MMGT15H120XB6C , JT075N065WED , MMGT25H120XB6C , MMGT40H120XB6C , MMGT50H120X6C , MMGT50W120X6C , MMGT50W120XB6C , MMGT75H120X6C , MMGT75W120X6C , MMGT75W120XB6C .
History: MMGT10CB120XB6C
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History: MMGT10CB120XB6C
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